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231225s2020 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201905603
|2 doi
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|a pubmed24n1021.xml
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|a (DE-627)NLM306427311
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|a DE-627
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|e rakwb
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|a eng
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|a Yan, Han
|e verfasserin
|4 aut
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|a Electric-Field-Controlled Antiferromagnetic Spintronic Devices
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|c 2020
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a In recent years, the field of antiferromagnetic spintronics has been substantially advanced. Electric-field control is a promising approach for achieving ultralow power spintronic devices via suppressing Joule heating. Here, cutting-edge research, including electric-field modulation of antiferromagnetic spintronic devices using strain, ionic liquids, dielectric materials, and electrochemical ionic migration, is comprehensively reviewed. Various emergent topics such as the Néel spin-orbit torque, chiral spintronics, topological antiferromagnetic spintronics, anisotropic magnetoresistance, memory devices, 2D magnetism, and magneto-ionic modulation with respect to antiferromagnets are examined. In conclusion, the possibility of realizing high-quality room-temperature antiferromagnetic tunnel junctions, antiferromagnetic spin logic devices, and artificial antiferromagnetic neurons is highlighted. It is expected that this work provides an appropriate and forward-looking perspective that will promote the rapid development of this field
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|a Journal Article
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|a Review
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|a antiferromagnetic spintronics
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|a artificial neurons
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|a electrostatic modulation
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|a ionic modulation
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|a piezoelectric strain
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1 |
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|a Feng, Zexin
|e verfasserin
|4 aut
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1 |
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|a Qin, Peixin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhou, Xiaorong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Guo, Huixin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Xiaoning
|e verfasserin
|4 aut
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|a Chen, Hongyu
|e verfasserin
|4 aut
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|a Zhang, Xin
|e verfasserin
|4 aut
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| 700 |
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|a Wu, Haojiang
|e verfasserin
|4 aut
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| 700 |
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|a Jiang, Chengbao
|e verfasserin
|4 aut
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| 700 |
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|a Liu, Zhiqi
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 32(2020), 12 vom: 15. März, Seite e1905603
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:32
|g year:2020
|g number:12
|g day:15
|g month:03
|g pages:e1905603
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|u http://dx.doi.org/10.1002/adma.201905603
|3 Volltext
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