Electric-Field-Controlled Antiferromagnetic Spintronic Devices

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 32(2020), 12 vom: 15. März, Seite e1905603
1. Verfasser:	Yan, Han (VerfasserIn)
Weitere Verfasser:	Feng, Zexin, Qin, Peixin, Zhou, Xiaorong, Guo, Huixin, Wang, Xiaoning, Chen, Hongyu, Zhang, Xin, Wu, Haojiang, Jiang, Chengbao, Liu, Zhiqi
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2020
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article Review antiferromagnetic spintronics artificial neurons electrostatic modulation ionic modulation piezoelectric strain

Beschreibung
Zusammenfassung:	© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. In recent years, the field of antiferromagnetic spintronics has been substantially advanced. Electric-field control is a promising approach for achieving ultralow power spintronic devices via suppressing Joule heating. Here, cutting-edge research, including electric-field modulation of antiferromagnetic spintronic devices using strain, ionic liquids, dielectric materials, and electrochemical ionic migration, is comprehensively reviewed. Various emergent topics such as the Néel spin-orbit torque, chiral spintronics, topological antiferromagnetic spintronics, anisotropic magnetoresistance, memory devices, 2D magnetism, and magneto-ionic modulation with respect to antiferromagnets are examined. In conclusion, the possibility of realizing high-quality room-temperature antiferromagnetic tunnel junctions, antiferromagnetic spin logic devices, and artificial antiferromagnetic neurons is highlighted. It is expected that this work provides an appropriate and forward-looking perspective that will promote the rapid development of this field
Beschreibung:	Date Revised 30.09.2020 published: Print-Electronic Citation Status PubMed-not-MEDLINE
ISSN:	1521-4095
DOI:	10.1002/adma.201905603