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231225s2020 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201906725
|2 doi
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|a pubmed24n1019.xml
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|a (DE-627)NLM305933035
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|a (NLM)31997471
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|a DE-627
|b ger
|c DE-627
|e rakwb
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| 041 |
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|a eng
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| 100 |
1 |
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|a Herrmann, Hannes
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Contrast Reversal in Scanning Tunneling Microscopy and Its Implications for the Topological Classification of SmB6
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|c 2020
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 12.03.2020
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a SmB6 has recently attracted considerable interest as a candidate for the first strongly correlated topological insulator. Such materials promise entirely new properties such as correlation-enhanced bulk bandgaps or a Fermi surface from spin excitations. Whether SmB6 and its surface states are topological or trivial is still heavily disputed however, and a solution is hindered by major disagreement between angle-resolved photoemission (ARPES) and scanning tunneling microscopy (STM) results. Here, a combined ARPES and STM experiment is conducted. It is discovered that the STM contrast strongly depends on the bias voltage and reverses its sign beyond 1 V. It is shown that the understanding of this contrast reversal is the clue to resolving the discrepancy between ARPES and STM results. In particular, the scanning tunneling spectra reflect a low-energy electronic structure at the surface, which supports a trivial origin of the surface states and the surface metallicity of SmB6
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|a Journal Article
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|a heavy fermions
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| 650 |
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|a photoemission
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| 650 |
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|a scanning tunneling microscopy
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4 |
|a topological insulators
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|a Hlawenka, Peter
|e verfasserin
|4 aut
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|a Siemensmeyer, Konrad
|e verfasserin
|4 aut
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|a Weschke, Eugen
|e verfasserin
|4 aut
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1 |
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|a Sánchez-Barriga, Jaime
|e verfasserin
|4 aut
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|a Varykhalov, Andrei
|e verfasserin
|4 aut
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1 |
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|a Shitsevalova, Natalya Y
|e verfasserin
|4 aut
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1 |
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|a Dukhnenko, Anatoliy V
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Filipov, Volodymyr B
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Gabáni, Slavomir
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Flachbart, Karol
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Rader, Oliver
|e verfasserin
|4 aut
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|a Sterrer, Martin
|e verfasserin
|4 aut
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|a Rienks, Emile D L
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 32(2020), 10 vom: 27. März, Seite e1906725
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:32
|g year:2020
|g number:10
|g day:27
|g month:03
|g pages:e1906725
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|u http://dx.doi.org/10.1002/adma.201906725
|3 Volltext
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