Coupling Topological Insulator SnSb2 Te4 Nanodots with Highly Doped Graphene for High-Rate Energy Storage

© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 32(2020), 2 vom: 22. Jan., Seite e1905632
1. Verfasser: Wu, Zhibin (VerfasserIn)
Weitere Verfasser: Liang, Gemeng, Pang, Wei Kong, Zhou, Tengfei, Cheng, Zhenxiang, Zhang, Wenchao, Liu, Ye, Johannessen, Bernt, Guo, Zaiping
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2020
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article SnSb2Te4 batteries heterojunctions topological insulators
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520 |a Topological insulators have spurred worldwide interest, but their advantageous properties have scarcely been explored in terms of electrochemical energy storage, and their high-rate capability and long-term cycling stability still remain a significant challenge to harvest. p-Type topological insulator SnSb2 Te4 nanodots anchoring on few-layered graphene (SnSb2 Te4 /G) are synthesized as a stable anode for high-rate lithium-ion batteries and potassium-ion batteries through a ball-milling method. These SnSb2 Te4 /G composite electrodes show ultralong cycle lifespan (478 mAh g-1 at 1 A g-1 after 1000 cycles) and excellent rate capability (remaining 373 mAh g-1 even at 10 A g-1 ) in Li-ion storage owing to the rapid ion transport accelerated by the PN heterojunction, virtual electron highways provided by the conductive topological surface state, and extraordinary pseudocapacitive contribution, whose excellent phase reversibility is confirmed by synchrotron in situ X-ray powder diffraction. Surprisingly, durable lifespan even at practical levels of mass loading (>10 mg cm-2 ) for Li-ion storage and excellent K-ion storage performance are also observed. This work provides new insights for designing high-rate electrode materials by boosting conductive topological surfaces, atomic doping, and the interface interaction 
650 4 |a Journal Article 
650 4 |a SnSb2Te4 
650 4 |a batteries 
650 4 |a heterojunctions 
650 4 |a topological insulators 
700 1 |a Liang, Gemeng  |e verfasserin  |4 aut 
700 1 |a Pang, Wei Kong  |e verfasserin  |4 aut 
700 1 |a Zhou, Tengfei  |e verfasserin  |4 aut 
700 1 |a Cheng, Zhenxiang  |e verfasserin  |4 aut 
700 1 |a Zhang, Wenchao  |e verfasserin  |4 aut 
700 1 |a Liu, Ye  |e verfasserin  |4 aut 
700 1 |a Johannessen, Bernt  |e verfasserin  |4 aut 
700 1 |a Guo, Zaiping  |e verfasserin  |4 aut 
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773 1 8 |g volume:32  |g year:2020  |g number:2  |g day:22  |g month:01  |g pages:e1905632 
856 4 0 |u http://dx.doi.org/10.1002/adma.201905632  |3 Volltext 
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