Defect-Engineered Atomically Thin MoS2 Homogeneous Electronics for Logic Inverters

Defect-Engineered Atomically Thin MoS2 Homogeneous Electronics for Logic Inverters

© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 32(2020), 2 vom: 21. Jan., Seite e1906646
1. Verfasser: Gao, Li (VerfasserIn)
Weitere Verfasser: Liao, Qingliang, Zhang, Xiankun, Liu, Xiaozhi, Gu, Lin, Liu, Baishan, Du, Junli, Ou, Yang, Xiao, Jiankun, Kang, Zhuo, Zhang, Zheng, Zhang, Yue
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2020
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article defect engineering electronic structure modulation logic inverters monolayer MoS2 sulfur vacancies
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520 |a Ultrathin molybdenum disulfide (MoS2 ) presents ideal properties for building next-generation atomically thin circuitry. However, it is difficult to construct logic units of MoS2 monolayer using traditional silicon-based doping schemes, such as atomic substitution and ion implantation, as they cause lattice disruption and doping instability. An accurate and feasible electronic structure modulation strategy from defect engineering is proposed to construct homogeneous electronics for MoS2 monolayer logic inverters. By utilizing the energy-matched electron induction of the solution process, numerous pure and lattice-stable monosulfur vacancies (Vmonos ) are introduced to modulate the electronic structure of monolayer MoS2 via a shallow trapping effect. The resulting modulation effectively reduces the electronic concentration of MoS2 and improves the work function by 100 meV. Under modulation of Vmonos , an atomically thin homogenous monolayer MoS2 logic inverter with a voltage gain of 4 is successfully constructed. A brand-new and practical design route of defect modulation for 2D-based circuit development is provided 
650 4 |a Journal Article 
650 4 |a defect engineering 
650 4 |a electronic structure modulation 
650 4 |a logic inverters 
650 4 |a monolayer MoS2 
650 4 |a sulfur vacancies 
700 1 |a Liao, Qingliang  |e verfasserin  |4 aut 
700 1 |a Zhang, Xiankun  |e verfasserin  |4 aut 
700 1 |a Liu, Xiaozhi  |e verfasserin  |4 aut 
700 1 |a Gu, Lin  |e verfasserin  |4 aut 
700 1 |a Liu, Baishan  |e verfasserin  |4 aut 
700 1 |a Du, Junli  |e verfasserin  |4 aut 
700 1 |a Ou, Yang  |e verfasserin  |4 aut 
700 1 |a Xiao, Jiankun  |e verfasserin  |4 aut 
700 1 |a Kang, Zhuo  |e verfasserin  |4 aut 
700 1 |a Zhang, Zheng  |e verfasserin  |4 aut 
700 1 |a Zhang, Yue  |e verfasserin  |4 aut 
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773 1 8 |g volume:32  |g year:2020  |g number:2  |g day:21  |g month:01  |g pages:e1906646 
856 4 0 |u http://dx.doi.org/10.1002/adma.201906646  |3 Volltext 
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