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231225s2020 xx |||||o 00| ||eng c |
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|a 10.1109/TUFFC.2019.2950902
|2 doi
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|a pubmed24n1009.xml
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|a (DE-627)NLM302933220
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|a (NLM)31689188
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Choi, Won Young
|e verfasserin
|4 aut
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|a Comparison of Si3N4-SiO2 and SiO2 Insulation Layer for Zero-Bias CMUT Operation Using Dielectric Charging Effects
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|c 2020
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 30.03.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a In this letter, we report the characteristics of zero-bias capacitive micromachined ultrasonic transducers (CMUTs) in various aspects, considering the transmission and reception sensitivity and evaluation of the long-term stability with ac transmission in immersion. The main idea of the zero-bias CMUT implementation is that the charge is injected by the dielectric charging effects in an insulation layer in the pull-in state. The CMUT was fabricated by a local oxidation of silicon (LOCOS) process, and the insulation layer consists of Si3 N4 -SiO2 and SiO2, which have been commonly used in previous studies. A study on the charging effects is reported to quantitatively observe the voltage shift by charge transfer with time dependence at different temperatures and collapsing time dependence. Therefore, we successfully implemented a zero-bias CMUT with a transmission efficiency of 4.62 kPa/V at a center frequency of 7.53 MHz in Si3 N4-SiO2 and a transmission efficiency of 6.78 kPa/V at a center frequency of 7.86 MHz in SiO2 immersion
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|a Journal Article
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|a Lee, Chang Hoon
|e verfasserin
|4 aut
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1 |
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|a Kim, Young Hun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Park, Kwan Kyu
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t IEEE transactions on ultrasonics, ferroelectrics, and frequency control
|d 1986
|g 67(2020), 4 vom: 05. Apr., Seite 879-882
|w (DE-627)NLM098181017
|x 1525-8955
|7 nnns
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| 773 |
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|g volume:67
|g year:2020
|g number:4
|g day:05
|g month:04
|g pages:879-882
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|u http://dx.doi.org/10.1109/TUFFC.2019.2950902
|3 Volltext
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|a GBV_USEFLAG_A
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|a SYSFLAG_A
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|a GBV_NLM
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|a GBV_ILN_22
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|a GBV_ILN_24
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|a GBV_ILN_350
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|a AR
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|d 67
|j 2020
|e 4
|b 05
|c 04
|h 879-882
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