Comparison of Si3N4-SiO2 and SiO2 Insulation Layer for Zero-Bias CMUT Operation Using Dielectric Charging Effects

In this letter, we report the characteristics of zero-bias capacitive micromachined ultrasonic transducers (CMUTs) in various aspects, considering the transmission and reception sensitivity and evaluation of the long-term stability with ac transmission in immersion. The main idea of the zero-bias CM...

Ausführliche Beschreibung

Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 67(2020), 4 vom: 05. Apr., Seite 879-882
1. Verfasser: Choi, Won Young (VerfasserIn)
Weitere Verfasser: Lee, Chang Hoon, Kim, Young Hun, Park, Kwan Kyu
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2020
Zugriff auf das übergeordnete Werk:IEEE transactions on ultrasonics, ferroelectrics, and frequency control
Schlagworte:Journal Article
Beschreibung
Zusammenfassung:In this letter, we report the characteristics of zero-bias capacitive micromachined ultrasonic transducers (CMUTs) in various aspects, considering the transmission and reception sensitivity and evaluation of the long-term stability with ac transmission in immersion. The main idea of the zero-bias CMUT implementation is that the charge is injected by the dielectric charging effects in an insulation layer in the pull-in state. The CMUT was fabricated by a local oxidation of silicon (LOCOS) process, and the insulation layer consists of Si3 N4 -SiO2 and SiO2, which have been commonly used in previous studies. A study on the charging effects is reported to quantitatively observe the voltage shift by charge transfer with time dependence at different temperatures and collapsing time dependence. Therefore, we successfully implemented a zero-bias CMUT with a transmission efficiency of 4.62 kPa/V at a center frequency of 7.53 MHz in Si3 N4-SiO2 and a transmission efficiency of 6.78 kPa/V at a center frequency of 7.86 MHz in SiO2 immersion
Beschreibung:Date Revised 30.03.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1525-8955
DOI:10.1109/TUFFC.2019.2950902