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231225s2020 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201904354
|2 doi
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|a pubmed24n1006.xml
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|a (DE-627)NLM302068988
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|a eng
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| 100 |
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|a Liu, Bin
|e verfasserin
|4 aut
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|a Hybrid Light Emitters and UV Solar-Blind Avalanche Photodiodes based on III-Nitride Semiconductors
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|c 2020
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|a Text
|b txt
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 13.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a In the last two decades, remarkable progress has been achieved in the field of optoelectronic devices based on III-nitride semiconductors. In terms of photonics applications in the visible-UV spectral range, III-nitrides are one of the most promising materials. For instance, emerging gallium nitride (GaN)-based micro-light-emitting diode (LED) technology for high-resolution display, and UV photo-detection for environmental monitoring, health, and medical applications. In this work, hybrid micro/nano-LEDs with integration of II-VI quantum dots by means of lithography and nano-imprinting patterning techniques are demonstrated, and high-performance red/green/blue and white emissions are achieved. Consequently, plasmonic nanolasers are designed and fabricated using a metal-oxide-semiconductor structure, where strong surface plasmon polariton coupling leads to the efficient lasing with a low excitation threshold from the visible to UV tunable spectral range. Furthermore, performance-improved AlGaN UV solar-blind avalanche photodiodes (APDs) with a separate absorption and multiplication structure by polarization engineering are reported. These APDs deliver a record-high avalanche gain of up to 1.6 × 105 . These newest advances in nano/micro-LEDs, nanolasers, and APDs can shed light on the emerging capabilities of III-nitride in cutting-edge applications
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|a Journal Article
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|a Review
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|a III-nitride semiconductors
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|a avalanche photodiodes
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|a light emitters
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|a nanostructures
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|a Chen, Dunjun
|e verfasserin
|4 aut
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|a Lu, Hai
|e verfasserin
|4 aut
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|a Tao, Tao
|e verfasserin
|4 aut
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|a Zhuang, Zhe
|e verfasserin
|4 aut
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|a Shao, Zhengguang
|e verfasserin
|4 aut
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|a Xu, Weizong
|e verfasserin
|4 aut
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|a Ge, Haixiong
|e verfasserin
|4 aut
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|a Zhi, Ting
|e verfasserin
|4 aut
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|a Ren, Fangfang
|e verfasserin
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|a Ye, Jiandong
|e verfasserin
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|a Xie, Zili
|e verfasserin
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|a Zhang, Rong
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 32(2020), 27 vom: 13. Juli, Seite e1904354
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|g volume:32
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|g month:07
|g pages:e1904354
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|u http://dx.doi.org/10.1002/adma.201904354
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