Hybrid Light Emitters and UV Solar-Blind Avalanche Photodiodes based on III-Nitride Semiconductors
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Veröffentlicht in: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 32(2020), 27 vom: 13. Juli, Seite e1904354 |
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Weitere Verfasser: | , , , , , , , , , , , |
Format: | Online-Aufsatz |
Sprache: | English |
Veröffentlicht: |
2020
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Zugriff auf das übergeordnete Werk: | Advanced materials (Deerfield Beach, Fla.) |
Schlagworte: | Journal Article Review III-nitride semiconductors avalanche photodiodes light emitters nanostructures |
Zusammenfassung: | © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. In the last two decades, remarkable progress has been achieved in the field of optoelectronic devices based on III-nitride semiconductors. In terms of photonics applications in the visible-UV spectral range, III-nitrides are one of the most promising materials. For instance, emerging gallium nitride (GaN)-based micro-light-emitting diode (LED) technology for high-resolution display, and UV photo-detection for environmental monitoring, health, and medical applications. In this work, hybrid micro/nano-LEDs with integration of II-VI quantum dots by means of lithography and nano-imprinting patterning techniques are demonstrated, and high-performance red/green/blue and white emissions are achieved. Consequently, plasmonic nanolasers are designed and fabricated using a metal-oxide-semiconductor structure, where strong surface plasmon polariton coupling leads to the efficient lasing with a low excitation threshold from the visible to UV tunable spectral range. Furthermore, performance-improved AlGaN UV solar-blind avalanche photodiodes (APDs) with a separate absorption and multiplication structure by polarization engineering are reported. These APDs deliver a record-high avalanche gain of up to 1.6 × 105 . These newest advances in nano/micro-LEDs, nanolasers, and APDs can shed light on the emerging capabilities of III-nitride in cutting-edge applications |
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Beschreibung: | Date Revised 13.10.2020 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
ISSN: | 1521-4095 |
DOI: | 10.1002/adma.201904354 |