Mimicking Sensory Adaptation with Dielectric Engineered Organic Transistors

© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 31(2019), 48 vom: 20. Nov., Seite e1905018
1. Verfasser: Shen, Hongguang (VerfasserIn)
Weitere Verfasser: He, Zihan, Jin, Wenlong, Xiang, Lanyi, Zhao, Wenrui, Di, Chong-An, Zhu, Daoben
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2019
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article bioelectronic device interface engineering organic adaptive transistor organic transistor sensory adaptation
Beschreibung
Zusammenfassung:© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Mimicking sensory adaptation with transistors is essential for developing next-generation smart circuits. A key challenge is how to obtain controllable and reversible short-term signal decay while simultaneously maintaining long-term electrical stability. By introducing a buried dynamic-trapping interface within the dielectric layer, an organic adaptive transistor (OAT) with sensory adaptation functionality is developed. The device induces self-adaptive interfacial trapping to enable volatile shielding of the gating field, thereby leading to rapid and temporary carrier concentration decay in the conductive channel without diminishing the mobility upon a fixed voltage bias. More importantly, the device exhibits a fine-tuned decay constant ranging from 50 ms to 5 s, accurately matching the adaptation timescales in bio-systems. This not only suggests promising applications of OATs in flexible artificial intelligent elements, but also provides a strategy for engineering organic devices toward novel biomimetic functions
Beschreibung:Date Completed 26.11.2019
Date Revised 01.10.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201905018