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231225s2019 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201902407
|2 doi
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|a pubmed24n1004.xml
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|a (DE-627)NLM301209197
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|a DE-627
|b ger
|c DE-627
|e rakwb
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| 041 |
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|a eng
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| 100 |
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|a Schweicher, Guillaume
|e verfasserin
|4 aut
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| 245 |
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|a Chasing the "Killer" Phonon Mode for the Rational Design of Low-Disorder, High-Mobility Molecular Semiconductors
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|c 2019
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 25.10.2019
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Molecular vibrations play a critical role in the charge transport properties of weakly van der Waals bonded organic semiconductors. To understand which specific phonon modes contribute most strongly to the electron-phonon coupling and ensuing thermal energetic disorder in some of the most widely studied high-mobility molecular semiconductors, state-of-the-art quantum mechanical simulations of the vibrational modes and the ensuing electron-phonon coupling constants are combined with experimental measurements of the low-frequency vibrations using inelastic neutron scattering and terahertz time-domain spectroscopy. In this way, the long-axis sliding motion is identified as a "killer" phonon mode, which in some molecules contributes more than 80% to the total thermal disorder. Based on this insight, a way to rationalize mobility trends between different materials and derive important molecular design guidelines for new high-mobility molecular semiconductors is suggested
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|a Journal Article
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|a charge transport
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|a dynamic disorder
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|a field-effect transistors
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|a molecular design
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|a organic electronics
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|a transient localization scenario
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|a D'Avino, Gabriele
|e verfasserin
|4 aut
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|a Ruggiero, Michael T
|e verfasserin
|4 aut
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|a Harkin, David J
|e verfasserin
|4 aut
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|a Broch, Katharina
|e verfasserin
|4 aut
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|a Venkateshvaran, Deepak
|e verfasserin
|4 aut
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|a Liu, Guoming
|e verfasserin
|4 aut
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|a Richard, Audrey
|e verfasserin
|4 aut
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|a Ruzié, Christian
|e verfasserin
|4 aut
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|a Armstrong, Jeff
|e verfasserin
|4 aut
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|a Kennedy, Alan R
|e verfasserin
|4 aut
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|a Shankland, Kenneth
|e verfasserin
|4 aut
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|a Takimiya, Kazuo
|e verfasserin
|4 aut
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|a Geerts, Yves H
|e verfasserin
|4 aut
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|a Zeitler, J Axel
|e verfasserin
|4 aut
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|a Fratini, Simone
|e verfasserin
|4 aut
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|a Sirringhaus, Henning
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 31(2019), 43 vom: 22. Okt., Seite e1902407
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:31
|g year:2019
|g number:43
|g day:22
|g month:10
|g pages:e1902407
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|u http://dx.doi.org/10.1002/adma.201902407
|3 Volltext
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