Chasing the "Killer" Phonon Mode for the Rational Design of Low-Disorder, High-Mobility Molecular Semiconductors

© 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 31(2019), 43 vom: 22. Okt., Seite e1902407
1. Verfasser: Schweicher, Guillaume (VerfasserIn)
Weitere Verfasser: D'Avino, Gabriele, Ruggiero, Michael T, Harkin, David J, Broch, Katharina, Venkateshvaran, Deepak, Liu, Guoming, Richard, Audrey, Ruzié, Christian, Armstrong, Jeff, Kennedy, Alan R, Shankland, Kenneth, Takimiya, Kazuo, Geerts, Yves H, Zeitler, J Axel, Fratini, Simone, Sirringhaus, Henning
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2019
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article charge transport dynamic disorder field-effect transistors molecular design organic electronics transient localization scenario
Beschreibung
Zusammenfassung:© 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Molecular vibrations play a critical role in the charge transport properties of weakly van der Waals bonded organic semiconductors. To understand which specific phonon modes contribute most strongly to the electron-phonon coupling and ensuing thermal energetic disorder in some of the most widely studied high-mobility molecular semiconductors, state-of-the-art quantum mechanical simulations of the vibrational modes and the ensuing electron-phonon coupling constants are combined with experimental measurements of the low-frequency vibrations using inelastic neutron scattering and terahertz time-domain spectroscopy. In this way, the long-axis sliding motion is identified as a "killer" phonon mode, which in some molecules contributes more than 80% to the total thermal disorder. Based on this insight, a way to rationalize mobility trends between different materials and derive important molecular design guidelines for new high-mobility molecular semiconductors is suggested
Beschreibung:Date Completed 25.10.2019
Date Revised 01.10.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201902407