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231225s2019 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201903613
|2 doi
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|a pubmed24n1002.xml
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|a (DE-627)NLM300846819
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|a (NLM)31475400
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Ji, Hyun Goo
|e verfasserin
|4 aut
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|a Chemically Tuned p- and n-Type WSe2 Monolayers with High Carrier Mobility for Advanced Electronics
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|c 2019
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 16.10.2019
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Monolayers of transition metal dichalcogenides (TMDCs) have attracted a great interest for post-silicon electronics and photonics due to their high carrier mobility, tunable bandgap, and atom-thick 2D structure. With the analogy to conventional silicon electronics, establishing a method to convert TMDC to p- and n-type semiconductors is essential for various device applications, such as complementary metal-oxide-semiconductor (CMOS) circuits and photovoltaics. Here, a successful control of the electrical polarity of monolayer WSe2 is demonstrated by chemical doping. Two different molecules, 4-nitrobenzenediazonium tetrafluoroborate and diethylenetriamine, are utilized to convert ambipolar WSe2 field-effect transistors (FETs) to p- and n-type, respectively. Moreover, the chemically doped WSe2 show increased effective carrier mobilities of 82 and 25 cm2 V-1 s-1 for holes and electrons, respectively, which are much higher than those of the pristine WSe2 . The doping effects are studied by photoluminescence, Raman, X-ray photoelectron spectroscopy, and density functional theory. Chemically tuned WSe2 FETs are integrated into CMOS inverters, exhibiting extremely low power consumption (≈0.17 nW). Furthermore, a p-n junction within single WSe2 grain is realized via spatially controlled chemical doping. The chemical doping method for controlling the transport properties of WSe2 will contribute to the development of TMDC-based advanced electronics
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|a Journal Article
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|a chemical doping
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|a chemical vapor deposition
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|a complementary inverter
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|a p-n junction
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|a tungsten diselenide
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1 |
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|a Solís-Fernández, Pablo
|e verfasserin
|4 aut
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|a Yoshimura, Daisuke
|e verfasserin
|4 aut
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1 |
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|a Maruyama, Mina
|e verfasserin
|4 aut
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1 |
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|a Endo, Takahiko
|e verfasserin
|4 aut
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1 |
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|a Miyata, Yasumitsu
|e verfasserin
|4 aut
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|a Okada, Susumu
|e verfasserin
|4 aut
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|a Ago, Hiroki
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 31(2019), 42 vom: 18. Okt., Seite e1903613
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:31
|g year:2019
|g number:42
|g day:18
|g month:10
|g pages:e1903613
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|u http://dx.doi.org/10.1002/adma.201903613
|3 Volltext
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|a GBV_USEFLAG_A
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|a SYSFLAG_A
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| 912 |
|
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|a GBV_NLM
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| 912 |
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|a GBV_ILN_350
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| 951 |
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|a AR
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| 952 |
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|d 31
|j 2019
|e 42
|b 18
|c 10
|h e1903613
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