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231225s2019 xx |||||o 00| ||eng c |
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|a 10.1109/TUFFC.2019.2930722
|2 doi
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|a DE-627
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|e rakwb
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|a eng
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| 100 |
1 |
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|a Liang, Yuxing
|e verfasserin
|4 aut
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| 245 |
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|a Influence of Doping Concentration on the Outputs of a Bent ZnO Nanowire
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|c 2019
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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| 338 |
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|a ƒa Online-Ressource
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|a Date Revised 04.03.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a In this article, the governing equation on electric potential is established by coupling both the semiconducting characteristics and the piezo-effect property of a ZnO nanowire (ZNW). Carrier redistributions are solved for different doping concentrations while considering the effect of both types of charge carriers. The reason for the semiconducting characteristics of a ZNW to induce electric leakage in energy-harvesting is illustrated in detail and a proper initial carrier concentration, n0 or p0 , is obtained as follows: for a n-type ZnO fiber and for a p-type one under the intrinsic carrier concentration ni = 1.0×1016(1/m3) , which is of significance in both the design and the practical applications of piezotronics and piezo-phototropic devices
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|a Journal Article
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|a Hu, Yuantai
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t IEEE transactions on ultrasonics, ferroelectrics, and frequency control
|d 1986
|g 66(2019), 11 vom: 26. Nov., Seite 1793-1797
|w (DE-627)NLM098181017
|x 1525-8955
|7 nnns
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| 773 |
1 |
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|g volume:66
|g year:2019
|g number:11
|g day:26
|g month:11
|g pages:1793-1797
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|u http://dx.doi.org/10.1109/TUFFC.2019.2930722
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|h 1793-1797
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