Influence of Doping Concentration on the Outputs of a Bent ZnO Nanowire
In this article, the governing equation on electric potential is established by coupling both the semiconducting characteristics and the piezo-effect property of a ZnO nanowire (ZNW). Carrier redistributions are solved for different doping concentrations while considering the effect of both types of...
| Veröffentlicht in: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 66(2019), 11 vom: 26. Nov., Seite 1793-1797 |
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| Format: | Online-Aufsatz |
| Sprache: | English |
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2019
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| Zugriff auf das übergeordnete Werk: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control |
| Schlagworte: | Journal Article |
| Zusammenfassung: | In this article, the governing equation on electric potential is established by coupling both the semiconducting characteristics and the piezo-effect property of a ZnO nanowire (ZNW). Carrier redistributions are solved for different doping concentrations while considering the effect of both types of charge carriers. The reason for the semiconducting characteristics of a ZNW to induce electric leakage in energy-harvesting is illustrated in detail and a proper initial carrier concentration, n0 or p0 , is obtained as follows: for a n-type ZnO fiber and for a p-type one under the intrinsic carrier concentration ni = 1.0×1016(1/m3) , which is of significance in both the design and the practical applications of piezotronics and piezo-phototropic devices |
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| Beschreibung: | Date Revised 04.03.2020 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
| ISSN: | 1525-8955 |
| DOI: | 10.1109/TUFFC.2019.2930722 |