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231225s2019 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201806697
|2 doi
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|a pubmed24n0976.xml
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|a (DE-627)NLM292951892
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|a (NLM)30667548
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Kim, Youngrok
|e verfasserin
|4 aut
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| 245 |
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|a Enhanced Charge Injection Properties of Organic Field-Effect Transistor by Molecular Implantation Doping
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|c 2019
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 06.03.2019
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|a Date Revised 22.02.2021
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|a published: Print-Electronic
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|a ErratumIn: Adv Mater. 2020 Sep;32(38):e2003126. - PMID 33617046
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|a Citation Status PubMed-not-MEDLINE
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|a © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Organic semiconductors (OSCs) have been widely studied due to their merits such as mechanical flexibility, solution processability, and large-area fabrication. However, OSC devices still have to overcome contact resistance issues for better performances. Because of the Schottky contact at the metal-OSC interfaces, a non-ideal transfer curve feature often appears in the low-drain voltage region. To improve the contact properties of OSCs, there have been several methods reported, including interface treatment by self-assembled monolayers and introducing charge injection layers. Here, a selective contact doping of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4 -TCNQ) by solid-state diffusion in poly(2,5-bis(3-hexadecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT) to enhance carrier injection in bottom-gate PBTTT organic field-effect transistors (OFETs) is demonstrated. Furthermore, the effect of post-doping treatment on diffusion of F4 -TCNQ molecules in order to improve the device stability is investigated. In addition, the application of the doping technique to the low-voltage operation of PBTTT OFETs with high-k gate dielectrics demonstrated a potential for designing scalable and low-power organic devices by utilizing doping of conjugated polymers
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|a Journal Article
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|a F4-TCNQ
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|a PBTTT
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|a charge injection
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|a doping
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|a organic field-effect transistors
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4 |
|a solid-state diffusion
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1 |
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|a Chung, Seungjun
|e verfasserin
|4 aut
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1 |
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|a Cho, Kyungjune
|e verfasserin
|4 aut
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1 |
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|a Harkin, David
|e verfasserin
|4 aut
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1 |
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|a Hwang, Wang-Taek
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yoo, Daekyoung
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Jae-Keun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Woocheol
|e verfasserin
|4 aut
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| 700 |
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|a Song, Younggul
|e verfasserin
|4 aut
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|a Ahn, Heebeom
|e verfasserin
|4 aut
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1 |
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|a Hong, Yongtaek
|e verfasserin
|4 aut
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|a Sirringhaus, Henning
|e verfasserin
|4 aut
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|a Kang, Keehoon
|e verfasserin
|4 aut
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|a Lee, Takhee
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 31(2019), 10 vom: 30. März, Seite e1806697
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:31
|g year:2019
|g number:10
|g day:30
|g month:03
|g pages:e1806697
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|u http://dx.doi.org/10.1002/adma.201806697
|3 Volltext
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|d 31
|j 2019
|e 10
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|h e1806697
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