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231225s2019 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201805656
|2 doi
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|a pubmed24n0972.xml
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|a (DE-627)NLM291792367
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|a (NLM)30549329
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|a DE-627
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|e rakwb
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|a eng
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| 100 |
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|a Li, Alei
|e verfasserin
|4 aut
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|a Ultrahigh-Sensitive Broadband Photodetectors Based on Dielectric Shielded MoTe2 /Graphene/SnS2 p-g-n Junctions
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|c 2019
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 11.02.2019
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a 2D atomic sheets of transition metal dichalcogenides (TMDs) have a tremendous potential for next-generation optoelectronics since they can be stacked layer-by-layer to form van der Waals (vdW) heterostructures. This allows not only bypassing difficulties in heteroepitaxy of lattice-mismatched semiconductors of desired functionalities but also providing a scheme to design new optoelectronics that can surpass the fundamental limitations on their conventional semiconductor counterparts. Herein, a novel 2D h-BN/p-MoTe2 /graphene/n-SnS2 /h-BN p-g-n junction, fabricated by a layer-by-layer dry transfer, demonstrates high-sensitivity, broadband photodetection at room temperature. The combination of the MoTe2 and SnS2 of complementary bandgaps, and the graphene interlayer provides a unique vdW heterostructure with a vertical built-in electric field for high-efficiency broadband light absorption, exciton dissociation, and carrier transfer. The graphene interlayer plays a critical role in enhancing sensitivity and broadening the spectral range. An optimized device containing 5-7-layer graphene has been achieved and shows an extraordinary responsivity exceeding 2600 A W-1 with fast photoresponse and specific detectivity up to ≈1013 Jones in the ultraviolet-visible-near-infrared spectrum. This result suggests that the vdW p-g-n junctions containing multiple photoactive TMDs can provide a viable approach toward future ultrahigh-sensitivity and broadband photonic detectors
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|a Journal Article
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|a 2D materials
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|a broadband
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|a photodetectors
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|a transition-metal dichalcogenides
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|a van der Waals heterostructures
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|a Chen, Qianxue
|e verfasserin
|4 aut
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|a Wang, Peipei
|e verfasserin
|4 aut
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|a Gan, Yuan
|e verfasserin
|4 aut
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|a Qi, Tailei
|e verfasserin
|4 aut
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|a Wang, Peng
|e verfasserin
|4 aut
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|a Tang, Fangdong
|e verfasserin
|4 aut
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|a Wu, Judy Z
|e verfasserin
|4 aut
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|a Chen, Rui
|e verfasserin
|4 aut
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|a Zhang, Liyuan
|e verfasserin
|4 aut
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|a Gong, Youpin
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 31(2019), 6 vom: 01. Feb., Seite e1805656
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:31
|g year:2019
|g number:6
|g day:01
|g month:02
|g pages:e1805656
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|u http://dx.doi.org/10.1002/adma.201805656
|3 Volltext
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