The Semiconductor/Conductor Interface Piezoresistive Effect in an Organic Transistor for Highly Sensitive Pressure Sensors

The Semiconductor/Conductor Interface Piezoresistive Effect in an Organic Transistor for Highly Sensitive Pressure Sensors

© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 31(2019), 6 vom: 15. Feb., Seite e1805630
1. Verfasser: Wang, Zhongwu (VerfasserIn)
Weitere Verfasser: Guo, Shujing, Li, Hongwei, Wang, Bin, Sun, Yongtao, Xu, Zeyang, Chen, Xiaosong, Wu, Kunjie, Zhang, Xiaotao, Xing, Feifei, Li, Liqiang, Hu, Wenping
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2019
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article field-effect piezoresistive effect pressure sensors transistors tunable sensitivity
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520 |a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a The piezoresistive pressure sensor, a kind of widely investigated artificial device to transfer force stimuli to electrical signals, generally consists of one or more kinds of conducting materials. Here, a highly sensitive pressure sensor based on the semiconductor/conductor interface piezoresistive effect is successfully demonstrated by using organic transistor geometry. Because of the efficient combination of the piezoresistive effect and field-effect modulation in a single sensor, this pressure sensor shows excellent performance, such as high sensitivity (514 kPa-1 ), low limit of detection, short response and recovery time, and robust stability. More importantly, the unique gate modulation effect in the transistor endows the sensor with an unparalleled ability-tunable sensitivity via bias conditions in a single sensor, which is of great significance for applications in complex pressure environments. The novel working principle and high performance represent significant progress in the field of pressure sensors 
650 4 |a Journal Article 
650 4 |a field-effect 
650 4 |a piezoresistive effect 
650 4 |a pressure sensors 
650 4 |a transistors 
650 4 |a tunable sensitivity 
700 1 |a Guo, Shujing  |e verfasserin  |4 aut 
700 1 |a Li, Hongwei  |e verfasserin  |4 aut 
700 1 |a Wang, Bin  |e verfasserin  |4 aut 
700 1 |a Sun, Yongtao  |e verfasserin  |4 aut 
700 1 |a Xu, Zeyang  |e verfasserin  |4 aut 
700 1 |a Chen, Xiaosong  |e verfasserin  |4 aut 
700 1 |a Wu, Kunjie  |e verfasserin  |4 aut 
700 1 |a Zhang, Xiaotao  |e verfasserin  |4 aut 
700 1 |a Xing, Feifei  |e verfasserin  |4 aut 
700 1 |a Li, Liqiang  |e verfasserin  |4 aut 
700 1 |a Hu, Wenping  |e verfasserin  |4 aut 
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773 1 8 |g volume:31  |g year:2019  |g number:6  |g day:15  |g month:02  |g pages:e1805630 
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