|
|
|
|
| LEADER |
01000caa a22002652 4500 |
| 001 |
NLM287722953 |
| 003 |
DE-627 |
| 005 |
20250224001022.0 |
| 007 |
cr uuu---uuuuu |
| 008 |
231225s2018 xx |||||o 00| ||eng c |
| 024 |
7 |
|
|a 10.1002/adma.201803665
|2 doi
|
| 028 |
5 |
2 |
|a pubmed25n0958.xml
|
| 035 |
|
|
|a (DE-627)NLM287722953
|
| 035 |
|
|
|a (NLM)30133881
|
| 040 |
|
|
|a DE-627
|b ger
|c DE-627
|e rakwb
|
| 041 |
|
|
|a eng
|
| 100 |
1 |
|
|a Zhang, Yu
|e verfasserin
|4 aut
|
| 245 |
1 |
0 |
|a Edge-Epitaxial Growth of 2D NbS2 -WS2 Lateral Metal-Semiconductor Heterostructures
|
| 264 |
|
1 |
|c 2018
|
| 336 |
|
|
|a Text
|b txt
|2 rdacontent
|
| 337 |
|
|
|a ƒaComputermedien
|b c
|2 rdamedia
|
| 338 |
|
|
|a ƒa Online-Ressource
|b cr
|2 rdacarrier
|
| 500 |
|
|
|a Date Revised 27.02.2024
|
| 500 |
|
|
|a published: Print-Electronic
|
| 500 |
|
|
|a Citation Status Publisher
|
| 520 |
|
|
|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
|
| 520 |
|
|
|a 2D metal-semiconductor heterostructures based on transition metal dichalcogenides (TMDs) are considered as intriguing building blocks for various fields, such as contact engineering and high-frequency devices. Although, a series of p-n junctions utilizing semiconducting TMDs have been constructed hitherto, the realization of such a scheme using 2D metallic analogs has not been reported. Here, the synthesis of uniform monolayer metallic NbS2 on sapphire substrate with domain size reaching to a millimeter scale via a facile chemical vapor deposition (CVD) route is demonstrated. More importantly, the epitaxial growth of NbS2 -WS2 lateral metal-semiconductor heterostructures via a "two-step" CVD method is realized. Both the lateral and vertical NbS2 -WS2 heterostructures are achieved here. Transmission electron microscopy studies reveal a clear chemical modulation with distinct interfaces. Raman and photoluminescence maps confirm the precisely controlled spatial modulation of the as-grown NbS2 -WS2 heterostructures. The existence of the NbS2 -WS2 heterostructures is further manifested by electrical transport measurements. This work broadens the horizon of the in situ synthesis of TMD-based heterostructures and enlightens the possibility of applications based on 2D metal-semiconductor heterostructures
|
| 650 |
|
4 |
|a Journal Article
|
| 650 |
|
4 |
|a NbS2-WS2 heterostructures
|
| 650 |
|
4 |
|a controllable growth
|
| 650 |
|
4 |
|a metal-semiconductor heterostructures
|
| 650 |
|
4 |
|a metallic transition metal dichalcogenides (TMDs)
|
| 700 |
1 |
|
|a Yin, Lei
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Chu, Junwei
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Shifa, Tofik Ahmed
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Xia, Jing
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Wang, Feng
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Wen, Yao
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Zhan, Xueying
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Wang, Zhenxing
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a He, Jun
|e verfasserin
|4 aut
|
| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2018) vom: 22. Aug., Seite e1803665
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
|
| 773 |
1 |
8 |
|g year:2018
|g day:22
|g month:08
|g pages:e1803665
|
| 856 |
4 |
0 |
|u http://dx.doi.org/10.1002/adma.201803665
|3 Volltext
|
| 912 |
|
|
|a GBV_USEFLAG_A
|
| 912 |
|
|
|a SYSFLAG_A
|
| 912 |
|
|
|a GBV_NLM
|
| 912 |
|
|
|a GBV_ILN_350
|
| 951 |
|
|
|a AR
|
| 952 |
|
|
|j 2018
|b 22
|c 08
|h e1803665
|