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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201800074
|2 doi
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|a pubmed24n0956.xml
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|a (DE-627)NLM287096033
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|a (NLM)30069932
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Wang, Xinsheng
|e verfasserin
|4 aut
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|a Chemical Growth of 1T-TaS2 Monolayer and Thin Films
|b Robust Charge Density Wave Transitions and High Bolometric Responsivity
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 10.10.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Ultrathin two-dimensional (2D) charge density wave (CDW) materials, with sharp resistance change at the phase-transition temperature, yet with ultrathin thickness, hold great potential for electrical device applications. However, chemical synthesis of high-quality samples and observation of the CDW states down to the monolayer limit is still of great challenge. Chemical vapor deposition of 1T-TaS2 sheets on hexagonal boron nitride (h-BN) with robust CDW states even down to the monolayer extreme is reported here. Further, based on the near commensurate CDW to incommensurate CDW phase transition with a high temperature coefficient of resistance (TCR), highly responsive room-temperature bolometers are fabricated by suspending the as-grown 1T-TaS2 sheets
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|a Journal Article
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|a 2D materials
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|a TaS2
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|a bolometers
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|a charge density waves
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|a chemical vapor deposition
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|a Liu, Haining
|e verfasserin
|4 aut
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|a Wu, Juanxia
|e verfasserin
|4 aut
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|a Lin, Junhao
|e verfasserin
|4 aut
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|a He, Wen
|e verfasserin
|4 aut
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|a Wang, Hui
|e verfasserin
|4 aut
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|a Shi, Xinghua
|e verfasserin
|4 aut
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|a Suenaga, Kazutomo
|e verfasserin
|4 aut
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|a Xie, Liming
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 30(2018), 38 vom: 15. Sept., Seite e1800074
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:30
|g year:2018
|g number:38
|g day:15
|g month:09
|g pages:e1800074
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|u http://dx.doi.org/10.1002/adma.201800074
|3 Volltext
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