Chemical Growth of 1T-TaS2 Monolayer and Thin Films : Robust Charge Density Wave Transitions and High Bolometric Responsivity

© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 30(2018), 38 vom: 15. Sept., Seite e1800074
1. Verfasser: Wang, Xinsheng (VerfasserIn)
Weitere Verfasser: Liu, Haining, Wu, Juanxia, Lin, Junhao, He, Wen, Wang, Hui, Shi, Xinghua, Suenaga, Kazutomo, Xie, Liming
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2018
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D materials TaS2 bolometers charge density waves chemical vapor deposition
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520 |a Ultrathin two-dimensional (2D) charge density wave (CDW) materials, with sharp resistance change at the phase-transition temperature, yet with ultrathin thickness, hold great potential for electrical device applications. However, chemical synthesis of high-quality samples and observation of the CDW states down to the monolayer limit is still of great challenge. Chemical vapor deposition of 1T-TaS2 sheets on hexagonal boron nitride (h-BN) with robust CDW states even down to the monolayer extreme is reported here. Further, based on the near commensurate CDW to incommensurate CDW phase transition with a high temperature coefficient of resistance (TCR), highly responsive room-temperature bolometers are fabricated by suspending the as-grown 1T-TaS2 sheets 
650 4 |a Journal Article 
650 4 |a 2D materials 
650 4 |a TaS2 
650 4 |a bolometers 
650 4 |a charge density waves 
650 4 |a chemical vapor deposition 
700 1 |a Liu, Haining  |e verfasserin  |4 aut 
700 1 |a Wu, Juanxia  |e verfasserin  |4 aut 
700 1 |a Lin, Junhao  |e verfasserin  |4 aut 
700 1 |a He, Wen  |e verfasserin  |4 aut 
700 1 |a Wang, Hui  |e verfasserin  |4 aut 
700 1 |a Shi, Xinghua  |e verfasserin  |4 aut 
700 1 |a Suenaga, Kazutomo  |e verfasserin  |4 aut 
700 1 |a Xie, Liming  |e verfasserin  |4 aut 
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