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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201803109
|2 doi
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|a pubmed24n1308.xml
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|a (DE-627)NLM28663094X
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|a (NLM)30022534
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Zhou, Guanyu
|e verfasserin
|4 aut
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| 245 |
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|a High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 27.02.2024
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|a published: Print-Electronic
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|a Citation Status Publisher
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The transfer-free direct growth of high-performance materials and devices can enable transformative new technologies. Here, room-temperature field-effect hole mobilities as high as 707 cm2 V-1 s-1 are reported, achieved using transfer-free, low-temperature (≤120 °C) direct growth of helical tellurium (Te) nanostructure devices on SiO2 /Si. The Te nanostructures exhibit significantly higher device performance than other low-temperature grown semiconductors, and it is demonstrated that through careful control of the growth process, high-performance Te can be grown on other technologically relevant substrates including flexible plastics like polyethylene terephthalate and graphene in addition to amorphous oxides like SiO2 /Si and HfO2 . The morphology of the Te films can be tailored by the growth temperature, and different carrier scattering mechanisms are identified for films with different morphologies. The transfer-free direct growth of high-mobility Te devices can enable major technological breakthroughs, as the low-temperature growth and fabrication is compatible with the severe thermal budget constraints of emerging applications. For example, vertical integration of novel devices atop a silicon complementary metal oxide semiconductor platform (thermal budget <450 °C) has been theoretically shown to provide a 10× systems level performance improvement, while flexible and wearable electronics (thermal budget <200 °C) can revolutionize defense and medical applications
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|a Journal Article
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|a MBE growth
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|a high-mobility filed effect transistor
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|a low-temperature growth
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|a tellurium
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|a transfer-free device fabrication
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|a Addou, Rafik
|e verfasserin
|4 aut
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|a Wang, Qingxiao
|e verfasserin
|4 aut
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|a Honari, Shahin
|e verfasserin
|4 aut
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|a Cormier, Christopher R
|e verfasserin
|4 aut
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|a Cheng, Lanxia
|e verfasserin
|4 aut
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|a Yue, Ruoyu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Smyth, Christopher M
|e verfasserin
|4 aut
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| 700 |
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|a Laturia, Akash
|e verfasserin
|4 aut
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| 700 |
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|a Kim, Jiyoung
|e verfasserin
|4 aut
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| 700 |
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|a Vandenberghe, William G
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Moon J
|e verfasserin
|4 aut
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|a Wallace, Robert M
|e verfasserin
|4 aut
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| 700 |
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|a Hinkle, Christopher L
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2018) vom: 18. Juli, Seite e1803109
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g year:2018
|g day:18
|g month:07
|g pages:e1803109
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|u http://dx.doi.org/10.1002/adma.201803109
|3 Volltext
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