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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201801773
|2 doi
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|a pubmed24n0952.xml
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|a DE-627
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|e rakwb
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|a eng
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| 100 |
1 |
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|a Zheng, Jianyun
|e verfasserin
|4 aut
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|a Defect-Enhanced Charge Separation and Transfer within Protection Layer/Semiconductor Structure of Photoanodes
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 21.08.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Silicon (Si) requires a protection layer to maintain stable and long-time photoanodic reaction. However, poor charge separation and transfer are key constraint factors in protection layer/Si photoanodes that reduce their water-splitting efficiency. Here, a simultaneous enhancement of charge separation and transfer in Nb-doped NiOx /Ni/black-Si photoanodes induced by plasma treatment is reported. The optimized photoanodes yield the highest charge-separation efficiency (ηsep ) of ≈81% at 1.23 V versus reversible hydrogen electrode, corresponding to the photocurrent density of ≈29.1 mA cm-2 . On the basis of detailed characterizations, the concentration and species of oxygen defects in the NiOx -based layer are adjusted by synergistic effect of Nb doping and plasma treatment, which are the dominating factors for forming suitable band structure and providing a favorable hole-migration channel. This work elucidates the important role of oxygen defects on charge separation and transfer in the protection layer/Si-based photoelectrochemical systems and is encouraging for application of this synergistic strategy to other candidate photoanodes
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|a Journal Article
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|a charge separation and transfer
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|a doping
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|a oxygen defects
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|a plasma
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|a protection layers
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1 |
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|a Lyu, Yanhong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xie, Chao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Ruilun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Tao, Li
|e verfasserin
|4 aut
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1 |
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|a Wu, Haibo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhou, Huaijuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Jiang, Sanping
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Shuangyin
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 30(2018), 31 vom: 19. Aug., Seite e1801773
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:30
|g year:2018
|g number:31
|g day:19
|g month:08
|g pages:e1801773
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|u http://dx.doi.org/10.1002/adma.201801773
|3 Volltext
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