Defect-Enhanced Charge Separation and Transfer within Protection Layer/Semiconductor Structure of Photoanodes
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Veröffentlicht in: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 30(2018), 31 vom: 19. Aug., Seite e1801773 |
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1. Verfasser: | |
Weitere Verfasser: | , , , , , , , |
Format: | Online-Aufsatz |
Sprache: | English |
Veröffentlicht: |
2018
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Zugriff auf das übergeordnete Werk: | Advanced materials (Deerfield Beach, Fla.) |
Schlagworte: | Journal Article charge separation and transfer doping oxygen defects plasma protection layers |
Zusammenfassung: | © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Silicon (Si) requires a protection layer to maintain stable and long-time photoanodic reaction. However, poor charge separation and transfer are key constraint factors in protection layer/Si photoanodes that reduce their water-splitting efficiency. Here, a simultaneous enhancement of charge separation and transfer in Nb-doped NiOx /Ni/black-Si photoanodes induced by plasma treatment is reported. The optimized photoanodes yield the highest charge-separation efficiency (ηsep ) of ≈81% at 1.23 V versus reversible hydrogen electrode, corresponding to the photocurrent density of ≈29.1 mA cm-2 . On the basis of detailed characterizations, the concentration and species of oxygen defects in the NiOx -based layer are adjusted by synergistic effect of Nb doping and plasma treatment, which are the dominating factors for forming suitable band structure and providing a favorable hole-migration channel. This work elucidates the important role of oxygen defects on charge separation and transfer in the protection layer/Si-based photoelectrochemical systems and is encouraging for application of this synergistic strategy to other candidate photoanodes |
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Beschreibung: | Date Completed 21.08.2018 Date Revised 30.09.2020 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
ISSN: | 1521-4095 |
DOI: | 10.1002/adma.201801773 |