Microwave Characterization of Ba-Substituted PZT and ZnO Thin Films

The microwave dielectric properties of (Ba0.1Pb0.9)(Zr0.52Ti0.48)O3 (BPZT) and ZnO thin films with thicknesses below were investigated. No significant dielectric relaxation was observed for both BPZT and ZnO up to 30 GHz. The intrinsic dielectric constant of BPZT was as high as 980 at 30 GHz. The ab...

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Veröffentlicht in:IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 65(2018), 5 vom: 07. Mai, Seite 881-888
1. Verfasser: Tierno, Davide (VerfasserIn)
Weitere Verfasser: Dekkers, Matthijn, Wittendorp, Paul, Sun, Xiao, Bayer, Samuel C, King, Seth T, Van Elshocht, Sven, Heyns, Marc, Radu, Iuliana P, Adelmann, Christoph
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2018
Zugriff auf das übergeordnete Werk:IEEE transactions on ultrasonics, ferroelectrics, and frequency control
Schlagworte:Journal Article Research Support, Non-U.S. Gov't