Microwave Characterization of Ba-Substituted PZT and ZnO Thin Films
The microwave dielectric properties of (Ba0.1Pb0.9)(Zr0.52Ti0.48)O3 (BPZT) and ZnO thin films with thicknesses below were investigated. No significant dielectric relaxation was observed for both BPZT and ZnO up to 30 GHz. The intrinsic dielectric constant of BPZT was as high as 980 at 30 GHz. The ab...
| Veröffentlicht in: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 65(2018), 5 vom: 07. Mai, Seite 881-888 |
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| Weitere Verfasser: | , , , , , , , , |
| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2018
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| Zugriff auf das übergeordnete Werk: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control |
| Schlagworte: | Journal Article Research Support, Non-U.S. Gov't |
| Zusammenfassung: | The microwave dielectric properties of (Ba0.1Pb0.9)(Zr0.52Ti0.48)O3 (BPZT) and ZnO thin films with thicknesses below were investigated. No significant dielectric relaxation was observed for both BPZT and ZnO up to 30 GHz. The intrinsic dielectric constant of BPZT was as high as 980 at 30 GHz. The absence of strong dielectric dispersion and loss peaks in the studied frequency range can be linked to the small grain diameters in these ultrathin films |
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| Beschreibung: | Date Completed 21.03.2019 Date Revised 21.03.2019 published: Print Citation Status PubMed-not-MEDLINE |
| ISSN: | 1525-8955 |
| DOI: | 10.1109/TUFFC.2018.2812424 |