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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201800017
|2 doi
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|a pubmed24n0941.xml
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|a (DE-627)NLM282305394
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|a (NLM)29575148
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|a DE-627
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|c DE-627
|e rakwb
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|a eng
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|a Un, Hio-Ieng
|e verfasserin
|4 aut
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| 245 |
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|a Charge-Trapping-Induced Non-Ideal Behaviors in Organic Field-Effect Transistors
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 01.08.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Organic field-effect transistors (OFETs) with impressively high hole mobilities over 10 cm2 V-1 s-1 and electron mobilities over 1 cm2 V-1 s-1 have been reported in the past few years. However, significant non-ideal electrical characteristics, e.g., voltage-dependent mobilities, have been widely observed in both small-molecule and polymer systems. This issue makes the accurate evaluation of the electrical performance impossible and also limits the practical applications of OFETs. Here, a semiconductor-unrelated, charge-trapping-induced non-ideality in OFETs is reported, and a revised model for the non-ideal transfer characteristics is provided. The trapping process can be directly observed using scanning Kelvin probe microscopy. It is found that such trapping-induced non-ideality exists in OFETs with different types of charge carriers (p-type or n-type), different types of dielectric materials (inorganic and organic) that contain different functional groups (OH, NH2 , COOH, etc.). As fas as it is known, this is the first report for the non-ideal transport behaviors in OFETs caused by semiconductor-independent charge trapping. This work reveals the significant role of dielectric charge trapping in the non-ideal transistor characteristics and also provides guidelines for device engineering toward ideal OFETs
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|a Journal Article
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|a charge trapping
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4 |
|a non-ideal behavior
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|a organic field-effect transistors
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| 650 |
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4 |
|a scanning Kelvin probe microscopy
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| 700 |
1 |
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|a Cheng, Peng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lei, Ting
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yang, Chi-Yuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Jie-Yu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Pei, Jian
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 30(2018), 18 vom: 03. Mai, Seite e1800017
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:30
|g year:2018
|g number:18
|g day:03
|g month:05
|g pages:e1800017
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|u http://dx.doi.org/10.1002/adma.201800017
|3 Volltext
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