Ultrathin and Conformal Initiated Chemical-Vapor-Deposited Layers of Systematically Varied Surface Energy for Controlling the Directed Self-Assembly of Block CoPolymers

Directed self-assembly (DSA) of block copolymer (BCP) thin films is a promising approach to enable next-generation patterning at increasingly smaller length scales. DSA utilizes interfacial wetting layers to force the BCP domains to self-assemble with the desired orientation with respect to the subs...

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1992. - 34(2018), 15 vom: 17. Apr., Seite 4494-4502
1. Verfasser: Moni, Priya (VerfasserIn)
Weitere Verfasser: Suh, Hyo Seon, Dolejsi, Moshe, Kim, Do Han, Mohr, Alan C, Nealey, Paul F, Gleason, Karen K
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2018
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article Research Support, U.S. Gov't, Non-P.H.S.
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520 |a Directed self-assembly (DSA) of block copolymer (BCP) thin films is a promising approach to enable next-generation patterning at increasingly smaller length scales. DSA utilizes interfacial wetting layers to force the BCP domains to self-assemble with the desired orientation with respect to the substrate. Here, we demonstrate that initiated chemical-vapor-deposited (iCVD) polydivinylbenzene (pDVB) ultrathin films can direct the self-assembly of poly(styrene- block-methylmethacrylate). We found that the methyl radicals formed at increased filament temperatures during the iCVD process result in the backbone methylation of pDVB. By tuning the degree of backbone methylation, we systematically changed the wetting properties of the iCVD pDVB from a slight poly(methylmethacrylate) preference to complete poly(styrene) preference. Additionally, we utilize the conformal nature of the iCVD to form a wetting layer over a topographical line and space pattern, which is subsequently used to produce self-assembled BCP films with both perpendicular orientation and long-range alignment 
650 4 |a Journal Article 
650 4 |a Research Support, U.S. Gov't, Non-P.H.S. 
700 1 |a Suh, Hyo Seon  |e verfasserin  |4 aut 
700 1 |a Dolejsi, Moshe  |e verfasserin  |4 aut 
700 1 |a Kim, Do Han  |e verfasserin  |4 aut 
700 1 |a Mohr, Alan C  |e verfasserin  |4 aut 
700 1 |a Nealey, Paul F  |e verfasserin  |4 aut 
700 1 |a Gleason, Karen K  |e verfasserin  |4 aut 
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