Dopant Distribution in Atomic Layer Deposited ZnO:Al Films Visualized by Transmission Electron Microscopy and Atom Probe Tomography
The maximum conductivity achievable in Al-doped ZnO thin films prepared by atomic layer deposition (ALD) is limited by the low doping efficiency of Al. To better understand the limiting factors for the doping efficiency, the three-dimensional distribution of Al atoms in the ZnO host material matrix...
Ausführliche Beschreibung
Bibliographische Detailangaben
Veröffentlicht in: | Chemistry of materials : a publication of the American Chemical Society. - 1998. - 30(2018), 4 vom: 27. Feb., Seite 1209-1217
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1. Verfasser: |
Wu, Yizhi
(VerfasserIn) |
Weitere Verfasser: |
Giddings, A Devin,
Verheijen, Marcel A,
Macco, Bart,
Prosa, Ty J,
Larson, David J,
Roozeboom, Fred,
Kessels, Wilhelmus M M |
Format: | Online-Aufsatz
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Sprache: | English |
Veröffentlicht: |
2018
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Zugriff auf das übergeordnete Werk: | Chemistry of materials : a publication of the American Chemical Society
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Schlagworte: | Journal Article |