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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201704733
|2 doi
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|a pubmed24n0928.xml
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|a eng
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|a Ju, Sailong
|e verfasserin
|4 aut
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|a Evidence for Itinerant Carriers in an Anisotropic Narrow-Gap Semiconductor by Angle-Resolved Photoemission Spectroscopy
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 01.08.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The ability to accurately determine the electronic structure of solids has become a key prerequisite for modern functional materials. For example, the precise determination of the electronic structure helps to balance the three thermoelectric parameters, which is the biggest challenge to design high-performance thermoelectric materials. Herein, by high-resolution, angle-resolved photoemission spectroscopy (ARPES), the itinerant carriers in CsBi4 Te6 (CBT) are revealed for the first time. CBT is a typical anisotropic, narrow-gap semiconductor used as a practical candidate for low-temperature thermoelectric applications, and p-doped CBT series show superconductivity at relatively low carrier concentrations. The ARPES results show a significantly larger bandwidth near the Fermi surface than calculations, which means the carriers transport anisotropically and itinerantly in CBT. It is reasonable to believe that these newly discovered features of carriers in narrow-gap semiconductors are promising for designing optimal thermoelectric materials and superconductors
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|a Journal Article
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|a CsBi4Te6
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|a angle-resolved photoemission spectroscopy
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|a itinerant carriers
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|a narrow-gap semiconductors
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|a Bai, Wei
|e verfasserin
|4 aut
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|a Wu, Liming
|e verfasserin
|4 aut
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|a Lin, Hua
|e verfasserin
|4 aut
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|a Xiao, Chong
|e verfasserin
|4 aut
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|a Cui, Shengtao
|e verfasserin
|4 aut
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|a Li, Zhou
|e verfasserin
|4 aut
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|a Kong, Shuai
|e verfasserin
|4 aut
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|a Liu, Yi
|e verfasserin
|4 aut
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|a Liu, Dayong
|e verfasserin
|4 aut
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|a Zhang, Guobin
|e verfasserin
|4 aut
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|a Sun, Zhe
|e verfasserin
|4 aut
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| 700 |
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|a Xie, Yi
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 30(2018), 2 vom: 23. Jan.
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|u http://dx.doi.org/10.1002/adma.201704733
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