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231225s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201703424
|2 doi
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|a pubmed24n0923.xml
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|a (DE-627)NLM27692990X
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|a (NLM)29024087
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Guo, Yunfan
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Chemical Intercalation of Topological Insulator Grid Nanostructures for High-Performance Transparent Electrodes
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 18.07.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a 2D layered nanomaterials with strong covalent bonding within layers and weak van der Waals' interactions between layers have attracted tremendous interest in recent years. Layered Bi2 Se3 is a representative topological insulator material in this family, which holds promise for exploration of the fundamental physics and practical applications such as transparent electrode. Here, a simultaneous enhancement of optical transmittancy and electrical conductivity in Bi2 Se3 grid electrodes by copper-atom intercalation is presented. These Cu-intercalated 2D Bi2 Se3 electrodes exhibit high uniformity over large area and excellent stabilities to environmental perturbations, such as UV light, thermal fluctuation, and mechanical distortion. Remarkably, by intercalating a high density of copper atoms, the electrical and optical performance of Bi2 Se3 grid electrodes is greatly improved from 900 Ω sq-1 , 68% to 300 Ω sq-1 , 82% in the visible range; with better performance of 300 Ω sq-1 , 91% achieved in the near-infrared region. These unique properties of Cu-intercalated topological insulator grid nanostructures may boost their potential applications in high-performance optoelectronics, especially for infrared optoelectronic devices
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|a Journal Article
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|a Bi2Se3
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4 |
|a Cu atoms
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|a intercalation
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|a topological insulators
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|a transparent electrodes
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|a Zhou, Jinyuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Yujing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhou, Xu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yao, Fengrui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Tan, Congwei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wu, Jinxiong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lin, Li
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Kaihui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Zhongfan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Peng, Hailin
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 44 vom: 19. Nov.
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:29
|g year:2017
|g number:44
|g day:19
|g month:11
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|u http://dx.doi.org/10.1002/adma.201703424
|3 Volltext
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|a AR
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|d 29
|j 2017
|e 44
|b 19
|c 11
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