Organic Ferroelectric-Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half-Selection Problem

Organic Ferroelectric-Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half-Selection Problem

© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 29(2017), 34 vom: 01. Sept.
Auteur principal: Zhao, Qiang (Auteur)
Autres auteurs: Wang, Hanlin, Ni, Zhenjie, Liu, Jie, Zhen, Yonggang, Zhang, Xiaotao, Jiang, Lang, Li, Rongjin, Dong, Huanli, Hu, Wenping
Format: Article en ligne
Langue:English
Publié: 2017
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article ferroelectrics memory devices organic electronics organic field-effect transistors
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520 |a Organic electronics based on poly(vinylidenefluoride/trifluoroethylene) (P(VDF-TrFE)) dielectric is facing great challenges in flexible circuits. As one indispensable part of integrated circuits, there is an urgent demand for low-cost and easy-fabrication nonvolatile memory devices. A breakthrough is made on a novel ferroelectric random access memory cell (1T1T FeRAM cell) consisting of one selection transistor and one ferroelectric memory transistor in order to overcome the half-selection problem. Unlike complicated manufacturing using multiple dielectrics, this system simplifies 1T1T FeRAM cell fabrication using one common dielectric. To achieve this goal, a strategy for semiconductor/insulator (S/I) interface modulation is put forward and applied to nonhysteretic selection transistors with high performances for driving or addressing purposes. As a result, high hole mobility of 3.81 cm2 V-1 s-1 (average) for 2,6-diphenylanthracene (DPA) and electron mobility of 0.124 cm2 V-1 s-1 (average) for N,N'-1H,1H-perfluorobutyl dicyanoperylenecarboxydiimide (PDI-FCN2 ) are obtained in selection transistors. In this work, we demonstrate this technology's potential for organic ferroelectric-based pixelated memory module fabrication 
650 4 |a Journal Article 
650 4 |a ferroelectrics 
650 4 |a memory devices 
650 4 |a organic electronics 
650 4 |a organic field-effect transistors 
700 1 |a Wang, Hanlin  |e verfasserin  |4 aut 
700 1 |a Ni, Zhenjie  |e verfasserin  |4 aut 
700 1 |a Liu, Jie  |e verfasserin  |4 aut 
700 1 |a Zhen, Yonggang  |e verfasserin  |4 aut 
700 1 |a Zhang, Xiaotao  |e verfasserin  |4 aut 
700 1 |a Jiang, Lang  |e verfasserin  |4 aut 
700 1 |a Li, Rongjin  |e verfasserin  |4 aut 
700 1 |a Dong, Huanli  |e verfasserin  |4 aut 
700 1 |a Hu, Wenping  |e verfasserin  |4 aut 
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773 1 8 |g volume:29  |g year:2017  |g number:34  |g day:01  |g month:09 
856 4 0 |u http://dx.doi.org/10.1002/adma.201701907  |3 Volltext 
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