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231225s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201701907
|2 doi
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|a pubmed25n0912.xml
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|a (DE-627)NLM273690841
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|a (NLM)28692748
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Zhao, Qiang
|e verfasserin
|4 aut
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|a Organic Ferroelectric-Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half-Selection Problem
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 18.07.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Organic electronics based on poly(vinylidenefluoride/trifluoroethylene) (P(VDF-TrFE)) dielectric is facing great challenges in flexible circuits. As one indispensable part of integrated circuits, there is an urgent demand for low-cost and easy-fabrication nonvolatile memory devices. A breakthrough is made on a novel ferroelectric random access memory cell (1T1T FeRAM cell) consisting of one selection transistor and one ferroelectric memory transistor in order to overcome the half-selection problem. Unlike complicated manufacturing using multiple dielectrics, this system simplifies 1T1T FeRAM cell fabrication using one common dielectric. To achieve this goal, a strategy for semiconductor/insulator (S/I) interface modulation is put forward and applied to nonhysteretic selection transistors with high performances for driving or addressing purposes. As a result, high hole mobility of 3.81 cm2 V-1 s-1 (average) for 2,6-diphenylanthracene (DPA) and electron mobility of 0.124 cm2 V-1 s-1 (average) for N,N'-1H,1H-perfluorobutyl dicyanoperylenecarboxydiimide (PDI-FCN2 ) are obtained in selection transistors. In this work, we demonstrate this technology's potential for organic ferroelectric-based pixelated memory module fabrication
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|a Journal Article
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|a ferroelectrics
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|a memory devices
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|a organic electronics
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|a organic field-effect transistors
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|a Wang, Hanlin
|e verfasserin
|4 aut
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1 |
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|a Ni, Zhenjie
|e verfasserin
|4 aut
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|a Liu, Jie
|e verfasserin
|4 aut
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1 |
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|a Zhen, Yonggang
|e verfasserin
|4 aut
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1 |
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|a Zhang, Xiaotao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Jiang, Lang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Rongjin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Dong, Huanli
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hu, Wenping
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 34 vom: 01. Sept.
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
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|g volume:29
|g year:2017
|g number:34
|g day:01
|g month:09
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|u http://dx.doi.org/10.1002/adma.201701907
|3 Volltext
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