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231225s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201701822
|2 doi
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|a pubmed24n0910.xml
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|a (DE-627)NLM27306584X
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|a (NLM)28628230
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|a DE-627
|b ger
|c DE-627
|e rakwb
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| 041 |
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|a eng
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| 100 |
1 |
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|a Heo, Jae Sang
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Thread-Like CMOS Logic Circuits Enabled by Reel-Processed Single-Walled Carbon Nanotube Transistors via Selective Doping
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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| 338 |
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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| 500 |
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|a Date Completed 18.07.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The realization of large-area electronics with full integration of 1D thread-like devices may open up a new era for ultraflexible and human adaptable electronic systems because of their potential advantages in demonstrating scalable complex circuitry by a simply integrated weaving technology. More importantly, the thread-like fiber electronic devices can be achieved using a simple reel-to-reel process, which is strongly required for low-cost and scalable manufacturing technology. Here, high-performance reel-processed complementary metal-oxide-semiconductor (CMOS) integrated circuits are reported on 1D fiber substrates by using selectively chemical-doped single-walled carbon nanotube (SWCNT) transistors. With the introduction of selective n-type doping and a nonrelief photochemical patterning process, p- and n-type SWCNT transistors are successfully implemented on cylindrical fiber substrates under air ambient, enabling high-performance and reliable thread-like CMOS inverter circuits. In addition, it is noteworthy that the optimized reel-coating process can facilitate improvement in the arrangement of SWCNTs, building uniformly well-aligned SWCNT channels, and enhancement of the electrical performance of the devices. The p- and n-type SWCNT transistors exhibit field-effect mobility of 4.03 and 2.15 cm2 V-1 s-1 , respectively, with relatively narrow distribution. Moreover, the SWCNT CMOS inverter circuits demonstrate a gain of 6.76 and relatively good dynamic operation at a supply voltage of 5.0 V
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4 |
|a Journal Article
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|a complelentary metal-oxide-semiconductor (CMOS) integrated circuits
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4 |
|a deep UV irradiation
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| 650 |
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4 |
|a single-walled carbon nanotubes (SWCNTs)
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| 650 |
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4 |
|a thread-like fiber electronic devices
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| 650 |
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4 |
|a transistors
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| 700 |
1 |
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|a Kim, Taehoon
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ban, Seok-Gyu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Daesik
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Jun Ho
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Jur, Jesse S
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Myung-Gil
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Yong-Hoon
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hong, Yongtaek
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Park, Sung Kyu
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 31 vom: 01. Aug.
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:29
|g year:2017
|g number:31
|g day:01
|g month:08
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|u http://dx.doi.org/10.1002/adma.201701822
|3 Volltext
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|a AR
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|d 29
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|e 31
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