Homogeneous 2D MoTe2 p-n Junctions and CMOS Inverters formed by Atomic-Layer-Deposition-Induced Doping

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Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 29(2017), 30 vom: 15. Aug.
Auteur principal: Lim, June Yeong (Auteur)
Autres auteurs: Pezeshki, Atiye, Oh, Sehoon, Kim, Jin Sung, Lee, Young Tack, Yu, Sanghyuck, Hwang, Do Kyung, Lee, Gwan-Hyoung, Choi, Hyoung Joon, Im, Seongil
Format: Article en ligne
Langue:English
Publié: 2017
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article 2D semiconductors atomic-layer-deposition-induced doping homogeneous complementary inverters p-n junction diodes α-MoTe2