High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics

High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics

© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 29(2017), 21 vom: 12. Juni
1. Verfasser: Chow, Wai Leong (VerfasserIn)
Weitere Verfasser: Yu, Peng, Liu, Fucai, Hong, Jinhua, Wang, Xingli, Zeng, Qingsheng, Hsu, Chuang-Han, Zhu, Chao, Zhou, Jiadong, Wang, Xiaowei, Xia, Juan, Yan, Jiaxu, Chen, Yu, Wu, Di, Yu, Ting, Shen, Zexiang, Lin, Hsin, Jin, Chuanhong, Tay, Beng Kang, Liu, Zheng
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2017
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D materials ambipolar field-effect transistors high mobility palladium diselenide
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520 |a Due to the intriguing optical and electronic properties, 2D materials have attracted a lot of interest for the electronic and optoelectronic applications. Identifying new promising 2D materials will be rewarding toward the development of next generation 2D electronics. Here, palladium diselenide (PdSe2 ), a noble-transition metal dichalcogenide (TMDC), is introduced as a promising high mobility 2D material into the fast growing 2D community. Field-effect transistors (FETs) based on ultrathin PdSe2 show intrinsic ambipolar characteristic. The polarity of the FET can be tuned. After vacuum annealing, the authors find PdSe2 to exhibit electron-dominated transport with high mobility (µe (max) = 216 cm2 V-1 s-1 ) and on/off ratio up to 103 . Hole-dominated-transport PdSe2 can be obtained by molecular doping using F4 -TCNQ. This pioneer work on PdSe2 will spark interests in the less explored regime of noble-TMDCs 
650 4 |a Journal Article 
650 4 |a 2D materials 
650 4 |a ambipolar 
650 4 |a field-effect transistors 
650 4 |a high mobility 
650 4 |a palladium diselenide 
700 1 |a Yu, Peng  |e verfasserin  |4 aut 
700 1 |a Liu, Fucai  |e verfasserin  |4 aut 
700 1 |a Hong, Jinhua  |e verfasserin  |4 aut 
700 1 |a Wang, Xingli  |e verfasserin  |4 aut 
700 1 |a Zeng, Qingsheng  |e verfasserin  |4 aut 
700 1 |a Hsu, Chuang-Han  |e verfasserin  |4 aut 
700 1 |a Zhu, Chao  |e verfasserin  |4 aut 
700 1 |a Zhou, Jiadong  |e verfasserin  |4 aut 
700 1 |a Wang, Xiaowei  |e verfasserin  |4 aut 
700 1 |a Xia, Juan  |e verfasserin  |4 aut 
700 1 |a Yan, Jiaxu  |e verfasserin  |4 aut 
700 1 |a Chen, Yu  |e verfasserin  |4 aut 
700 1 |a Wu, Di  |e verfasserin  |4 aut 
700 1 |a Yu, Ting  |e verfasserin  |4 aut 
700 1 |a Shen, Zexiang  |e verfasserin  |4 aut 
700 1 |a Lin, Hsin  |e verfasserin  |4 aut 
700 1 |a Jin, Chuanhong  |e verfasserin  |4 aut 
700 1 |a Tay, Beng Kang  |e verfasserin  |4 aut 
700 1 |a Liu, Zheng  |e verfasserin  |4 aut 
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856 4 0 |u http://dx.doi.org/10.1002/adma.201602969  |3 Volltext 
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