High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 29(2017), 21 vom: 12. Juni
1. Verfasser:	Chow, Wai Leong (VerfasserIn)
Weitere Verfasser:	Yu, Peng, Liu, Fucai, Hong, Jinhua, Wang, Xingli, Zeng, Qingsheng, Hsu, Chuang-Han, Zhu, Chao, Zhou, Jiadong, Wang, Xiaowei, Xia, Juan, Yan, Jiaxu, Chen, Yu, Wu, Di, Yu, Ting, Shen, Zexiang, Lin, Hsin, Jin, Chuanhong, Tay, Beng Kang, Liu, Zheng
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2017
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article 2D materials ambipolar field-effect transistors high mobility palladium diselenide

Beschreibung
Zusammenfassung:	© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Due to the intriguing optical and electronic properties, 2D materials have attracted a lot of interest for the electronic and optoelectronic applications. Identifying new promising 2D materials will be rewarding toward the development of next generation 2D electronics. Here, palladium diselenide (PdSe2 ), a noble-transition metal dichalcogenide (TMDC), is introduced as a promising high mobility 2D material into the fast growing 2D community. Field-effect transistors (FETs) based on ultrathin PdSe2 show intrinsic ambipolar characteristic. The polarity of the FET can be tuned. After vacuum annealing, the authors find PdSe2 to exhibit electron-dominated transport with high mobility (µe (max) = 216 cm2 V-1 s-1 ) and on/off ratio up to 103 . Hole-dominated-transport PdSe2 can be obtained by molecular doping using F4 -TCNQ. This pioneer work on PdSe2 will spark interests in the less explored regime of noble-TMDCs
Beschreibung:	Date Completed 18.07.2018 Date Revised 30.09.2020 published: Print-Electronic Citation Status PubMed-not-MEDLINE
ISSN:	1521-4095
DOI:	10.1002/adma.201602969