LEADER 01000naa a22002652 4500
001 NLM269862188
003 DE-627
005 20231224225356.0
007 cr uuu---uuuuu
008 231224s2017 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201606578  |2 doi 
028 5 2 |a pubmed24n0899.xml 
035 |a (DE-627)NLM269862188 
035 |a (NLM)28295696 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Studniarek, Michał  |e verfasserin  |4 aut 
245 1 0 |a Probing a Device's Active Atoms 
264 1 |c 2017 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 18.07.2018 
500 |a Date Revised 30.09.2020 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a Materials science and device studies have, when implemented jointly as "operando" studies, better revealed the causal link between the properties of the device's materials and its operation, with applications ranging from gas sensing to information and energy technologies. Here, as a further step that maximizes this causal link, the paper focuses on the electronic properties of those atoms that drive a device's operation by using it to read out the materials property. It is demonstrated how this method can reveal insight into the operation of a macroscale, industrial-grade microelectronic device on the atomic level. A magnetic tunnel junction's (MTJ's) current, which involves charge transport across different atomic species and interfaces, is measured while these atoms absorb soft X-rays with synchrotron-grade brilliance. X-ray absorption is found to affect magnetotransport when the photon energy and linear polarization are tuned to excite FeO bonds parallel to the MTJ's interfaces. This explicit link between the device's spintronic performance and these FeO bonds, although predicted, challenges conventional wisdom on their detrimental spintronic impact. The technique opens interdisciplinary possibilities to directly probe the role of different atomic species on device operation, and shall considerably simplify the materials science iterations within device research 
650 4 |a Journal Article 
650 4 |a X-ray absorption spectroscopy 
650 4 |a atom probe 
650 4 |a microelectronic devices 
650 4 |a operando measurements 
650 4 |a spintronics 
700 1 |a Halisdemir, Ufuk  |e verfasserin  |4 aut 
700 1 |a Schleicher, Filip  |e verfasserin  |4 aut 
700 1 |a Taudul, Beata  |e verfasserin  |4 aut 
700 1 |a Urbain, Etienne  |e verfasserin  |4 aut 
700 1 |a Boukari, Samy  |e verfasserin  |4 aut 
700 1 |a Hervé, Marie  |e verfasserin  |4 aut 
700 1 |a Lambert, Charles-Henri  |e verfasserin  |4 aut 
700 1 |a Hamadeh, Abbass  |e verfasserin  |4 aut 
700 1 |a Petit-Watelot, Sebastien  |e verfasserin  |4 aut 
700 1 |a Zill, Olivia  |e verfasserin  |4 aut 
700 1 |a Lacour, Daniel  |e verfasserin  |4 aut 
700 1 |a Joly, Loïc  |e verfasserin  |4 aut 
700 1 |a Scheurer, Fabrice  |e verfasserin  |4 aut 
700 1 |a Schmerber, Guy  |e verfasserin  |4 aut 
700 1 |a Da Costa, Victor  |e verfasserin  |4 aut 
700 1 |a Dixit, Anant  |e verfasserin  |4 aut 
700 1 |a Guitard, Pierre André  |e verfasserin  |4 aut 
700 1 |a Acosta, Manuel  |e verfasserin  |4 aut 
700 1 |a Leduc, Florian  |e verfasserin  |4 aut 
700 1 |a Choueikani, Fadi  |e verfasserin  |4 aut 
700 1 |a Otero, Edwige  |e verfasserin  |4 aut 
700 1 |a Wulfhekel, Wulf  |e verfasserin  |4 aut 
700 1 |a Montaigne, François  |e verfasserin  |4 aut 
700 1 |a Monteblanco, Elmer Nahuel  |e verfasserin  |4 aut 
700 1 |a Arabski, Jacek  |e verfasserin  |4 aut 
700 1 |a Ohresser, Philippe  |e verfasserin  |4 aut 
700 1 |a Beaurepaire, Eric  |e verfasserin  |4 aut 
700 1 |a Weber, Wolfgang  |e verfasserin  |4 aut 
700 1 |a Alouani, Mébarek  |e verfasserin  |4 aut 
700 1 |a Hehn, Michel  |e verfasserin  |4 aut 
700 1 |a Bowen, Martin  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 29(2017), 19 vom: 05. Mai  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:29  |g year:2017  |g number:19  |g day:05  |g month:05 
856 4 0 |u http://dx.doi.org/10.1002/adma.201606578  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 29  |j 2017  |e 19  |b 05  |c 05