Probing a Device's Active Atoms

Probing a Device's Active Atoms

© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 29(2017), 19 vom: 05. Mai
1. Verfasser: Studniarek, Michał (VerfasserIn)
Weitere Verfasser: Halisdemir, Ufuk, Schleicher, Filip, Taudul, Beata, Urbain, Etienne, Boukari, Samy, Hervé, Marie, Lambert, Charles-Henri, Hamadeh, Abbass, Petit-Watelot, Sebastien, Zill, Olivia, Lacour, Daniel, Joly, Loïc, Scheurer, Fabrice, Schmerber, Guy, Da Costa, Victor, Dixit, Anant, Guitard, Pierre André, Acosta, Manuel, Leduc, Florian, Choueikani, Fadi, Otero, Edwige, Wulfhekel, Wulf, Montaigne, François, Monteblanco, Elmer Nahuel, Arabski, Jacek, Ohresser, Philippe, Beaurepaire, Eric, Weber, Wolfgang, Alouani, Mébarek, Hehn, Michel, Bowen, Martin
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2017
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article X-ray absorption spectroscopy atom probe microelectronic devices operando measurements spintronics
Beschreibung
Zusammenfassung:© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Materials science and device studies have, when implemented jointly as "operando" studies, better revealed the causal link between the properties of the device's materials and its operation, with applications ranging from gas sensing to information and energy technologies. Here, as a further step that maximizes this causal link, the paper focuses on the electronic properties of those atoms that drive a device's operation by using it to read out the materials property. It is demonstrated how this method can reveal insight into the operation of a macroscale, industrial-grade microelectronic device on the atomic level. A magnetic tunnel junction's (MTJ's) current, which involves charge transport across different atomic species and interfaces, is measured while these atoms absorb soft X-rays with synchrotron-grade brilliance. X-ray absorption is found to affect magnetotransport when the photon energy and linear polarization are tuned to excite FeO bonds parallel to the MTJ's interfaces. This explicit link between the device's spintronic performance and these FeO bonds, although predicted, challenges conventional wisdom on their detrimental spintronic impact. The technique opens interdisciplinary possibilities to directly probe the role of different atomic species on device operation, and shall considerably simplify the materials science iterations within device research
Beschreibung:Date Completed 18.07.2018
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201606578