Role of Charge Traps in the Performance of Atomically Thin Transistors

Role of Charge Traps in the Performance of Atomically Thin Transistors

© 2017 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 29(2017), 19 vom: 20. Mai
1. Verfasser: Amit, Iddo (VerfasserIn)
Weitere Verfasser: Octon, Tobias J, Townsend, Nicola J, Reale, Francesco, Wright, C David, Mattevi, Cecilia, Craciun, Monica F, Russo, Saverio
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2017
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D materials MoTe2 current transients field-effect transistors surface states
Beschreibung
Zusammenfassung:© 2017 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Transient currents in atomically thin MoTe2 field-effect transistors (FETs) are measured during cycles of pulses through the gate electrode. The curves of the transient currents are analyzed in light of a newly proposed model for charge-trapping dynamics that renders a time-dependent change in the threshold voltage as the dominant effect on the channel hysteretic behavior over emission currents from the charge traps. The proposed model is expected to be instrumental in understanding the fundamental physics that governs the performance of atomically thin FETs and is applicable to the entire class of atomically thin-based devices. Hence, the model is vital to the intelligent design of fast and highly efficient optoelectronic devices
Beschreibung:Date Completed 18.07.2018
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201605598