Magnetic Nanoplatelet-Based Spin Memory Device Operating at Ambient Temperatures

© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 29(2017), 17 vom: 05. Mai
1. Verfasser: Koplovitz, Guy (VerfasserIn)
Weitere Verfasser: Primc, Darinka, Ben Dor, Oren, Yochelis, Shira, Rotem, Dvir, Porath, Danny, Paltiel, Yossi
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2017
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article magnetic memory magnetic nanoparticles molecular electronics self-assembled monolayers spintronics
Beschreibung
Zusammenfassung:© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
There is an increasing demand for realizing a simple Si based universal memory device working at ambient temperatures. In principle, nonvolatile magnetic memory can operate at low power consumption and high frequencies. However, in order to compete with existing memory technology, size reduction and simplification of the used material systems are essential. In this work, the chiral-induced spin selectivity effect is used along with 30-50 nm ferromagnetic nanoplatelets in order to realize a simple magnetic memory device. The vertical memory is Si compatible, easy to fabricate, and in principle can be scaled down to a single nanoparticle size. Results show clear dual magnetization behavior with threefold enhancement between the one and zero states. The magnetization of the device is accompanied with large avalanche like noise that is ascribed to the redistribution of current densities due to spin accumulation inducing coupling effects between the different nanoplatelets
Beschreibung:Date Completed 18.07.2018
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201606748