Heterogeneous Defect Domains in Single-Crystalline Hexagonal WS2

© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 29(2017), 15 vom: 07. Apr.
1. Verfasser: Jeong, Hye Yun (VerfasserIn)
Weitere Verfasser: Jin, Youngjo, Yun, Seok Joon, Zhao, Jiong, Baik, Jaeyoon, Keum, Dong Hoon, Lee, Hyun Seok, Lee, Young Hee
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2017
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article chalcogen vacancies defect states defect-induced strain hexagonal WS2 metal vacancies
LEADER 01000naa a22002652 4500
001 NLM268738203
003 DE-627
005 20231224223213.0
007 cr uuu---uuuuu
008 231224s2017 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201605043  |2 doi 
028 5 2 |a pubmed24n0895.xml 
035 |a (DE-627)NLM268738203 
035 |a (NLM)28170110 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Jeong, Hye Yun  |e verfasserin  |4 aut 
245 1 0 |a Heterogeneous Defect Domains in Single-Crystalline Hexagonal WS2 
264 1 |c 2017 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 18.07.2018 
500 |a Date Revised 01.10.2020 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a Single-crystalline monolayer hexagonal WS2 is segmented into alternating triangular domains: sulfur-vacancy (SV)-rich and tungsten-vacancy (WV)-rich domains. The WV-rich domain with deep-trap states reveals an electron-dedoping effect, and the electron mobility and photoluminescence are lower than those of the SV-rich domain with shallow-donor states by one order of magnitude. The vacancy-induced strain and doping effects are investigated via Raman and scanning photoelectron microscopy 
650 4 |a Journal Article 
650 4 |a chalcogen vacancies 
650 4 |a defect states 
650 4 |a defect-induced strain 
650 4 |a hexagonal WS2 
650 4 |a metal vacancies 
700 1 |a Jin, Youngjo  |e verfasserin  |4 aut 
700 1 |a Yun, Seok Joon  |e verfasserin  |4 aut 
700 1 |a Zhao, Jiong  |e verfasserin  |4 aut 
700 1 |a Baik, Jaeyoon  |e verfasserin  |4 aut 
700 1 |a Keum, Dong Hoon  |e verfasserin  |4 aut 
700 1 |a Lee, Hyun Seok  |e verfasserin  |4 aut 
700 1 |a Lee, Young Hee  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 29(2017), 15 vom: 07. Apr.  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:29  |g year:2017  |g number:15  |g day:07  |g month:04 
856 4 0 |u http://dx.doi.org/10.1002/adma.201605043  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 29  |j 2017  |e 15  |b 07  |c 04