Heterogeneous Defect Domains in Single-Crystalline Hexagonal WS2

Heterogeneous Defect Domains in Single-Crystalline Hexagonal WS2

© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 29(2017), 15 vom: 07. Apr.
1. Verfasser: Jeong, Hye Yun (VerfasserIn)
Weitere Verfasser: Jin, Youngjo, Yun, Seok Joon, Zhao, Jiong, Baik, Jaeyoon, Keum, Dong Hoon, Lee, Hyun Seok, Lee, Young Hee
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2017
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article chalcogen vacancies defect states defect-induced strain hexagonal WS2 metal vacancies
Beschreibung
Zusammenfassung:© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Single-crystalline monolayer hexagonal WS2 is segmented into alternating triangular domains: sulfur-vacancy (SV)-rich and tungsten-vacancy (WV)-rich domains. The WV-rich domain with deep-trap states reveals an electron-dedoping effect, and the electron mobility and photoluminescence are lower than those of the SV-rich domain with shallow-donor states by one order of magnitude. The vacancy-induced strain and doping effects are investigated via Raman and scanning photoelectron microscopy
Beschreibung:Date Completed 18.07.2018
Date Revised 01.10.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201605043