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231224s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201605511
|2 doi
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|a eng
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|a Seifrid, Martin
|e verfasserin
|4 aut
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|a Electrical Performance of a Molecular Organic Semiconductor under Thermal Stress
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|c 2017
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|a Text
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|a ƒaComputermedien
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|a Date Completed 18.07.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The high temperature performance oforganic field-effect transistorsbased on a molecular organic semiconductor with intermediate dimensions, namely X2, is evaluated. Hole mobility is stable, even at 200-250 °C. Changes in device characteristics at high temperature are reversible across multiple cycles of high temperature operation. Measurements at high temperature exhibit larger hysteresis, while at low temperature one observes the emergence of ambipolar transport
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|a Journal Article
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|a ambipolar transport
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|a device stability
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|a high temperature electronics
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|a organic field-effect transistors
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|a organic semiconductors
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|a Ford, Michael J
|e verfasserin
|4 aut
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1 |
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|a Li, Mingqi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Koh, Kyoung Moo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Trefonas, Peter
|e verfasserin
|4 aut
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|a Bazan, Guillermo C
|e verfasserin
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|t Advanced materials (Deerfield Beach, Fla.)
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|u http://dx.doi.org/10.1002/adma.201605511
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