Electrical Performance of a Molecular Organic Semiconductor under Thermal Stress

Electrical Performance of a Molecular Organic Semiconductor under Thermal Stress

© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 29(2017), 12 vom: 17. März
1. Verfasser: Seifrid, Martin (VerfasserIn)
Weitere Verfasser: Ford, Michael J, Li, Mingqi, Koh, Kyoung Moo, Trefonas, Peter, Bazan, Guillermo C
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2017
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article ambipolar transport device stability high temperature electronics organic field-effect transistors organic semiconductors
Beschreibung
Zusammenfassung:© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
The high temperature performance oforganic field-effect transistorsbased on a molecular organic semiconductor with intermediate dimensions, namely X2, is evaluated. Hole mobility is stable, even at 200-250 °C. Changes in device characteristics at high temperature are reversible across multiple cycles of high temperature operation. Measurements at high temperature exhibit larger hysteresis, while at low temperature one observes the emergence of ambipolar transport
Beschreibung:Date Completed 18.07.2018
Date Revised 01.10.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201605511