Direct Observations of Nanofilament Evolution in Switching Processes in HfO2 -Based Resistive Random Access Memory by In Situ TEM Studies

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 29(2017), 10 vom: 15. März
1. Verfasser:	Li, Chao (VerfasserIn)
Weitere Verfasser:	Gao, Bin, Yao, Yuan, Guan, Xiangxiang, Shen, Xi, Wang, Yanguo, Huang, Peng, Liu, Lifeng, Liu, Xiaoyan, Li, Junjie, Gu, Changzhi, Kang, Jinfeng, Yu, Richeng
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2017
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article electron holography energy-filtered image in situ TEM oxygen vacancies resistive switching


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245	1	0	\|a Direct Observations of Nanofilament Evolution in Switching Processes in HfO2 -Based Resistive Random Access Memory by In Situ TEM Studies
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500			\|a Date Completed 18.07.2018
500			\|a Date Revised 01.10.2020
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500			\|a Citation Status PubMed-not-MEDLINE
520			\|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
520			\|a Resistive switching processes in HfO2 are studied by electron holography and in situ energy-filtered imaging. The results show that oxygen vacancies are gradually generated in the oxide layer under ramped electrical bias, and finally form several conductive channels connecting the two electrodes. It also shows that the switching process occurs at the top interface of the hafnia layer
650		4	\|a Journal Article
650		4	\|a electron holography
650		4	\|a energy-filtered image
650		4	\|a in situ TEM
650		4	\|a oxygen vacancies
650		4	\|a resistive switching
700	1		\|a Gao, Bin \|e verfasserin \|4 aut
700	1		\|a Yao, Yuan \|e verfasserin \|4 aut
700	1		\|a Guan, Xiangxiang \|e verfasserin \|4 aut
700	1		\|a Shen, Xi \|e verfasserin \|4 aut
700	1		\|a Wang, Yanguo \|e verfasserin \|4 aut
700	1		\|a Huang, Peng \|e verfasserin \|4 aut
700	1		\|a Liu, Lifeng \|e verfasserin \|4 aut
700	1		\|a Liu, Xiaoyan \|e verfasserin \|4 aut
700	1		\|a Li, Junjie \|e verfasserin \|4 aut
700	1		\|a Gu, Changzhi \|e verfasserin \|4 aut
700	1		\|a Kang, Jinfeng \|e verfasserin \|4 aut
700	1		\|a Yu, Richeng \|e verfasserin \|4 aut
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856	4	0	\|u http://dx.doi.org/10.1002/adma.201602976 \|3 Volltext
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