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231224s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201604744
|2 doi
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|a pubmed24n0892.xml
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|a (NLM)28066989
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|a DE-627
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|e rakwb
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|a eng
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|a Zhao, Baodan
|e verfasserin
|4 aut
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|a High Open-Circuit Voltages in Tin-Rich Low-Bandgap Perovskite-Based Planar Heterojunction Photovoltaics
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 18.07.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2016 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Low-bandgap CH3 NH3 (Pbx Sn1-x )I3 (0 ≤ x ≤ 1) hybrid perovskites (e.g., ≈1.5-1.1 eV) demonstrating high surface coverage and superior optoelectronic properties are fabricated. State-of-the-art photovoltaic (PV) performance is reported with power conversion efficiencies approaching 10% in planar heterojunction architecture with small (<450 meV) energy loss compared to the bandgap and high (>100 cm2 V-1 s-1 ) intrinsic carrier mobilities
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|a Journal Article
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|a Urbach energy
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|a high mobility perovskites
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|a lead-tin perovskite PV
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|a low-bandgap perovskites
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|a Abdi-Jalebi, Mojtaba
|e verfasserin
|4 aut
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|a Tabachnyk, Maxim
|e verfasserin
|4 aut
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|a Glass, Hugh
|e verfasserin
|4 aut
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|a Kamboj, Varun S
|e verfasserin
|4 aut
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|a Nie, Wanyi
|e verfasserin
|4 aut
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|a Pearson, Andrew J
|e verfasserin
|4 aut
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|a Puttisong, Yuttapoom
|e verfasserin
|4 aut
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|a Gödel, Karl C
|e verfasserin
|4 aut
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|a Beere, Harvey E
|e verfasserin
|4 aut
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|a Ritchie, David A
|e verfasserin
|4 aut
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|a Mohite, Aditya D
|e verfasserin
|4 aut
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|a Dutton, Siân E
|e verfasserin
|4 aut
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|a Friend, Richard H
|e verfasserin
|4 aut
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|a Sadhanala, Aditya
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 2 vom: 01. Jan.
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:29
|g year:2017
|g number:2
|g day:01
|g month:01
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|u http://dx.doi.org/10.1002/adma.201604744
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