High Open-Circuit Voltages in Tin-Rich Low-Bandgap Perovskite-Based Planar Heterojunction Photovoltaics

High Open-Circuit Voltages in Tin-Rich Low-Bandgap Perovskite-Based Planar Heterojunction Photovoltaics

© 2016 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 29(2017), 2 vom: 01. Jan.
1. Verfasser: Zhao, Baodan (VerfasserIn)
Weitere Verfasser: Abdi-Jalebi, Mojtaba, Tabachnyk, Maxim, Glass, Hugh, Kamboj, Varun S, Nie, Wanyi, Pearson, Andrew J, Puttisong, Yuttapoom, Gödel, Karl C, Beere, Harvey E, Ritchie, David A, Mohite, Aditya D, Dutton, Siân E, Friend, Richard H, Sadhanala, Aditya
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2017
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Urbach energy high mobility perovskites lead-tin perovskite PV low-bandgap perovskites
Beschreibung
Zusammenfassung:© 2016 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Low-bandgap CH3 NH3 (Pbx Sn1-x )I3 (0 ≤ x ≤ 1) hybrid perovskites (e.g., ≈1.5-1.1 eV) demonstrating high surface coverage and superior optoelectronic properties are fabricated. State-of-the-art photovoltaic (PV) performance is reported with power conversion efficiencies approaching 10% in planar heterojunction architecture with small (<450 meV) energy loss compared to the bandgap and high (>100 cm2 V-1 s-1 ) intrinsic carrier mobilities
Beschreibung:Date Completed 18.07.2018
Date Revised 01.10.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201604744