Observation of Ultrathin Precursor Film Formation during Ge-Si Liquid-Phase Epitaxy from an Undersaturated Solution

Observation of Ultrathin Precursor Film Formation during Ge-Si Liquid-Phase Epitaxy from an Undersaturated Solution

Our in situ X-ray study shows that a silicon substrate in contact with an undersaturated In(Ge) solution is wetted by an approximately 1 nm thin germanium film, which does not grow any thicker. The results can be understood by the use of thickness-dependent correlated interfacial energies. This near...

Ausführliche Beschreibung

Bibliographische Detailangaben
Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1999. - 33(2017), 3 vom: 24. Jan., Seite 814-819
1. Verfasser: Vonk, Vedran (VerfasserIn)
Weitere Verfasser: Pontoni, Diego, Cremers, Melissa, Kerkenaar, Anne, Bode, Arno A C, Szweryn, Wiesiek, Nowak, Gregor, de Jong, Aryan E F, Dosch, Helmut, Vlieg, Elias
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2017
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Solutions Germanium 00072J7XWS Indium 045A6V3VFX Silicon Dioxide 7631-86-9 Silicon Z4152N8IUI
LEADER 01000naa a22002652 4500
001 NLM267301960
003 DE-627
005 20231224220404.0
007 cr uuu---uuuuu
008 231224s2017 xx |||||o 00| ||eng c
024 7 |a 10.1021/acs.langmuir.6b03984  |2 doi 
028 5 2 |a pubmed24n0891.xml 
035 |a (DE-627)NLM267301960 
035 |a (NLM)27995791 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Vonk, Vedran  |e verfasserin  |4 aut 
245 1 0 |a Observation of Ultrathin Precursor Film Formation during Ge-Si Liquid-Phase Epitaxy from an Undersaturated Solution 
264 1 |c 2017 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 24.09.2018 
500 |a Date Revised 24.09.2018 
500 |a published: Print-Electronic 
500 |a Citation Status MEDLINE 
520 |a Our in situ X-ray study shows that a silicon substrate in contact with an undersaturated In(Ge) solution is wetted by an approximately 1 nm thin germanium film, which does not grow any thicker. The results can be understood by the use of thickness-dependent correlated interfacial energies. This near-equilibrium heterogeneous interface structure marks the initial stage of crystal growth before the formation of bulk material, which can only form under conditions of supersaturation. This finding uncovers a fundamental aspect of the thermodynamics at solid-liquid interfaces relevant for understanding the transition from equilibrium to supersaturation and is of importance for nanoscale solution growth methods 
650 4 |a Journal Article 
650 4 |a Research Support, Non-U.S. Gov't 
650 7 |a Solutions  |2 NLM 
650 7 |a Germanium  |2 NLM 
650 7 |a 00072J7XWS  |2 NLM 
650 7 |a Indium  |2 NLM 
650 7 |a 045A6V3VFX  |2 NLM 
650 7 |a Silicon Dioxide  |2 NLM 
650 7 |a 7631-86-9  |2 NLM 
650 7 |a Silicon  |2 NLM 
650 7 |a Z4152N8IUI  |2 NLM 
700 1 |a Pontoni, Diego  |e verfasserin  |4 aut 
700 1 |a Cremers, Melissa  |e verfasserin  |4 aut 
700 1 |a Kerkenaar, Anne  |e verfasserin  |4 aut 
700 1 |a Bode, Arno A C  |e verfasserin  |4 aut 
700 1 |a Szweryn, Wiesiek  |e verfasserin  |4 aut 
700 1 |a Nowak, Gregor  |e verfasserin  |4 aut 
700 1 |a de Jong, Aryan E F  |e verfasserin  |4 aut 
700 1 |a Dosch, Helmut  |e verfasserin  |4 aut 
700 1 |a Vlieg, Elias  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Langmuir : the ACS journal of surfaces and colloids  |d 1999  |g 33(2017), 3 vom: 24. Jan., Seite 814-819  |w (DE-627)NLM098181009  |x 1520-5827  |7 nnns 
773 1 8 |g volume:33  |g year:2017  |g number:3  |g day:24  |g month:01  |g pages:814-819 
856 4 0 |u http://dx.doi.org/10.1021/acs.langmuir.6b03984  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_22 
912 |a GBV_ILN_350 
912 |a GBV_ILN_721 
951 |a AR 
952 |d 33  |j 2017  |e 3  |b 24  |c 01  |h 814-819