Observation of Ultrathin Precursor Film Formation during Ge-Si Liquid-Phase Epitaxy from an Undersaturated Solution
Our in situ X-ray study shows that a silicon substrate in contact with an undersaturated In(Ge) solution is wetted by an approximately 1 nm thin germanium film, which does not grow any thicker. The results can be understood by the use of thickness-dependent correlated interfacial energies. This near...
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Bibliographische Detailangaben
| Veröffentlicht in: | Langmuir : the ACS journal of surfaces and colloids. - 1999. - 33(2017), 3 vom: 24. Jan., Seite 814-819
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| 1. Verfasser: |
Vonk, Vedran
(VerfasserIn) |
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| Weitere Verfasser: |
Pontoni, Diego,
Cremers, Melissa,
Kerkenaar, Anne,
Bode, Arno A C,
Szweryn, Wiesiek,
Nowak, Gregor,
de Jong, Aryan E F,
Dosch, Helmut,
Vlieg, Elias |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2017
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| Zugriff auf das übergeordnete Werk: | Langmuir : the ACS journal of surfaces and colloids
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| Schlagworte: | Journal Article
Research Support, Non-U.S. Gov't
Solutions
Germanium
00072J7XWS
Indium
045A6V3VFX
Silicon Dioxide
7631-86-9
Silicon
Z4152N8IUI |
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