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231224s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201603925
|2 doi
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|a pubmed24n0889.xml
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|a eng
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|a Yu, Young-Jun
|e verfasserin
|4 aut
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|a Epitaxially Self-Assembled Alkane Layers for Graphene Electronics
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 18.07.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The epitaxially grown alkane layers on graphene are prepared by a simple drop-casting method and greatly reduce the environmentally driven doping and charge impurities in graphene. Multiscale simulation studies show that this enhancement of charge homogeneity in graphene originates from the lifting of graphene from the SiO2 surface toward the well-ordered and rigid alkane self-assembled layers
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|a Journal Article
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|a graphene
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|a mobility
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|a passivation
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|a self-assembly
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|a van der Waals interaction
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|a Lee, Gwan-Hyoung
|e verfasserin
|4 aut
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|a Choi, Ji Il
|e verfasserin
|4 aut
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|a Shim, Yoon Su
|e verfasserin
|4 aut
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|a Lee, Chul-Ho
|e verfasserin
|4 aut
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|a Kang, Seok Ju
|e verfasserin
|4 aut
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|a Lee, Sunwoo
|e verfasserin
|4 aut
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|a Rim, Kwang Taeg
|e verfasserin
|4 aut
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|a Flynn, George W
|e verfasserin
|4 aut
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|a Hone, James
|e verfasserin
|4 aut
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|a Kim, Yong-Hoon
|e verfasserin
|4 aut
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|a Kim, Philip
|e verfasserin
|4 aut
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|a Nuckolls, Colin
|e verfasserin
|4 aut
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|a Ahn, Seokhoon
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 5 vom: 31. Feb.
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|u http://dx.doi.org/10.1002/adma.201603925
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