Epitaxially Self-Assembled Alkane Layers for Graphene Electronics

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 29(2017), 5 vom: 31. Feb.
1. Verfasser: Yu, Young-Jun (VerfasserIn)
Weitere Verfasser: Lee, Gwan-Hyoung, Choi, Ji Il, Shim, Yoon Su, Lee, Chul-Ho, Kang, Seok Ju, Lee, Sunwoo, Rim, Kwang Taeg, Flynn, George W, Hone, James, Kim, Yong-Hoon, Kim, Philip, Nuckolls, Colin, Ahn, Seokhoon
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2017
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article graphene mobility passivation self-assembly van der Waals interaction
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520 |a The epitaxially grown alkane layers on graphene are prepared by a simple drop-casting method and greatly reduce the environmentally driven doping and charge impurities in graphene. Multiscale simulation studies show that this enhancement of charge homogeneity in graphene originates from the lifting of graphene from the SiO2 surface toward the well-ordered and rigid alkane self-assembled layers 
650 4 |a Journal Article 
650 4 |a graphene 
650 4 |a mobility 
650 4 |a passivation 
650 4 |a self-assembly 
650 4 |a van der Waals interaction 
700 1 |a Lee, Gwan-Hyoung  |e verfasserin  |4 aut 
700 1 |a Choi, Ji Il  |e verfasserin  |4 aut 
700 1 |a Shim, Yoon Su  |e verfasserin  |4 aut 
700 1 |a Lee, Chul-Ho  |e verfasserin  |4 aut 
700 1 |a Kang, Seok Ju  |e verfasserin  |4 aut 
700 1 |a Lee, Sunwoo  |e verfasserin  |4 aut 
700 1 |a Rim, Kwang Taeg  |e verfasserin  |4 aut 
700 1 |a Flynn, George W  |e verfasserin  |4 aut 
700 1 |a Hone, James  |e verfasserin  |4 aut 
700 1 |a Kim, Yong-Hoon  |e verfasserin  |4 aut 
700 1 |a Kim, Philip  |e verfasserin  |4 aut 
700 1 |a Nuckolls, Colin  |e verfasserin  |4 aut 
700 1 |a Ahn, Seokhoon  |e verfasserin  |4 aut 
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856 4 0 |u http://dx.doi.org/10.1002/adma.201603925  |3 Volltext 
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