Epitaxially Self-Assembled Alkane Layers for Graphene Electronics

Epitaxially Self-Assembled Alkane Layers for Graphene Electronics

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 29(2017), 5 vom: 31. Feb.
Auteur principal: Yu, Young-Jun (Auteur)
Autres auteurs: Lee, Gwan-Hyoung, Choi, Ji Il, Shim, Yoon Su, Lee, Chul-Ho, Kang, Seok Ju, Lee, Sunwoo, Rim, Kwang Taeg, Flynn, George W, Hone, James, Kim, Yong-Hoon, Kim, Philip, Nuckolls, Colin, Ahn, Seokhoon
Format: Article en ligne
Langue:English
Publié: 2017
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article graphene mobility passivation self-assembly van der Waals interaction
Description
Résumé:© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
The epitaxially grown alkane layers on graphene are prepared by a simple drop-casting method and greatly reduce the environmentally driven doping and charge impurities in graphene. Multiscale simulation studies show that this enhancement of charge homogeneity in graphene originates from the lifting of graphene from the SiO2 surface toward the well-ordered and rigid alkane self-assembled layers
Description:Date Completed 18.07.2018
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201603925